NE500199 NEC Electronics, NE500199 Datasheet - Page 2

• Manufacturer Part Number: NE500199
• Description: (NE500100 / NE500199) C-Band Medium Power GaAs MESFET
• Manufacturer: NEC Electronics

S-Parameters include 0.0010" (24.5 m) gold bond wires as follows:
Gate, 2 wires, 1 per bond pad, 0.0265" (674 m) long each wire
Drain, 2 wires, 1 per bond pad, 0.0232" (590 m) long each wire
Source, 4 wires, 2 per side, 0.0092" (234 m) long each wire
OUTLINE DIMENSIONS
TYPICAL SCATTERING PARAMETERS
NE 8500100 (2 Cells)
V
FREQUENCY
DS
10.00
= 10 V, I
0.10
0.20
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
GHZ
0.2 MAX
4.0 MIN BOTH LEADS
DS
0
-j
j
10
10
4.3 0.2
0.1
= 200 mA
1.7 0.15
+.06
-.02
MAG
j
0.990
0.981
0.933
0.884
0.865
0.859
0.850
0.850
0.850
0.852
0.853
0.854
0.854
0.854
0.854
0.850
0.842
0.839
0.836
0.833
0.834
0.832
-j
25
PACKAGE OUTLINE 99
25
S
10.1 GHz
22
Source
S
10.1 GHz
11
S
(Units in mm)
11
-120.400
-142.100
-155.700
-164.900
-172.000
-178.000
176.900
172.600
168.400
164.500
157.500
150.700
147.700
144.600
141.500
138.200
134.900
161.000
153.800
-18.400
-36.000
-78.900
ANG
11.0 0.15
6.0 0.2
15.0 0.3
5.2 0.3
5.2 0.3
-j
0.6 0.1
j
50
S
0.1 GHz
50
22
Drain
Gate
1.0 0.1
13.477
12.933
10.387
MAG
6.899
4.970
3.842
3.083
2.554
2.224
1.942
1.704
1.501
1.383
1.256
1.133
1.048
0.968
0.877
0.811
0.774
0.723
0.657
-j
j
2.2 0.2
1.2
100
100
S
0.1 GHz
11
S
4.0 0.1
5.0 MAX
21
168.400
158.100
106.600
132.500
-11.800
-17.600
-21.500
-25.600
90.700
79.200
69.600
60.300
52.100
45.400
38.600
29.500
22.900
18.200
11.900
-0.400
-4.800
ANG
3.800
(T
A
MAG
0.008
0.013
0.026
0.036
0.040
0.041
0.043
0.045
0.049
0.052
0.057
0.060
0.064
0.070
0.077
0.077
0.078
0.085
0.093
0.102
0.111
0.118
= 25 C)
S
12
ANG
74.200
72.500
53.300
37.500
30.700
28.100
31.000
32.300
33.400
33.100
35.700
34.900
35.800
36.000
34.300
30.300
33.300
35.700
34.200
32.400
29.100
25.500
180˚
+150˚
-150˚
0.1 GHz
S
+120˚
21
-120˚
S
MAG
0.122
0.131
0.171
0.210
0.235
0.258
0.278
0.302
0.330
0.355
0.382
0.409
0.433
0.457
0.481
0.502
0.521
0.546
0.568
0.592
0.613
0.633
S
0.1 GHz
D
G
22
S
-121.500
-132.500
-138.400
-141.400
-144.100
-146.900
-149.800
-152.700
-156.300
-160.000
-163.600
-167.400
-171.600
-175.000
-178.400
ANG
174.100
12
177.800
170.300
166.400
+90˚
-49.100
-27.200
-92.100
-90˚
780
S
10.1 GHz
21
(Units in m)
CHIP (00)
170
100
D
G
290
-60˚
+60˚
0.107
0.102
0.533
0.871
1.010
1.083
1.070
1.048
1.007
1.063
1.204
1.213
0.954
0.378
0.689
0.985
1.048
1.056
1.152
1.046
0.962
S
10.1 GHz
K
0.209 26.015
12
-30˚
+30˚
0˚
MAG
32.265
29.978
22.825
20.943
19.718
18.555
17.540
15.948
14.384
13.303
12.227
11.727
11.197
11.166
(dB)
Die Thickness 140
9.803
8.207
7.348
7.037
7.486
8.138
7.457
S
4.0 / DIV., 20.0 FS
S
0.03 / DIV., 0.15 FS
21
12
100
1
125
MAG:
MAG:
640