BLF7G20LS-160P Philips Semiconductors, BLF7G20LS-160P Datasheet - Page 3

• Manufacturer Part Number: BLF7G20LS-160P
• Description: Power LDMOS transistor
• Manufacturer: Philips Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G20L-160P_7G20LS-160P
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
f = 1805 MHz and 1880 MHz; RF performance at V
2 sections combined unless otherwise specified; in a class-AB production test circuit.
The BLF7G20L-160P and BLF7G20LS-160P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
Mode of operation: GSM EDGE; P
G
RL
η
ACPR
ACPR
EVM
EVM
Mode of operation: CW; P
G
η
DSS
DSX
GSS
j
fs
D
D
(BR)DSS
GS(th)
th(j-c)
DS(on)
p
p
= 25
in
rms
M
400k
600k
°
C; per section unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (400 kHz)
adjacent channel power ratio (600 kHz)
RMS EDGE signal distortion error
peak EDGE signal distortion error
power gain
drain efficiency
DS
BLF7G20L-160P; BLF7G20LS-160P
All information provided in this document is subject to legal disclaimers.
= 28 V; I
Rev. 01 — 22 June 2010
Dq
L(AV)
= 850 mA; P
= 135 W
L(AV)
= 65 W
L
Conditions
V
V
V
V
V
V
V
V
I
= 160 W (CW); f = 1805 MHz.
D
GS
DS
GS
GS
DS
GS
DS
GS
= 3.15 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
DS
GS(th)
GS(th)
Conditions
= 28 V; I
T
Conditions
D
case
DS
D
D
= 0.9 mA
+ 3.75 V;
DS
+ 3.75 V;
= 90 mA
= 2.5 A
= 28 V
= 80 °C; P
= 0 V
Dq
= 850 mA; T
Power LDMOS transistor
L
Min Typ
17.3 18.5
-
40
-
-
-
-
16.8 17.5
52
= 100 W
Min Typ
65
1.5
-
14
-
-
-
case
© NXP B.V. 2010. All rights reserved.
www.DataSheet4U.com
−15
43
−61
−74
2.5
8
57
-
1.9
-
-
-
<tbd> -
0.15
= 25
Max
-
−8
-
−58
−70.5 dBc
3.8
12.5
-
-
Typ
0.41 K/W
°
Max Unit
-
2.3
2
-
200
-
C;
Unit
V
V
μA
A
nA
S
Ω
Unit
dB
dB
%
dBc
%
%
dB
%
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