3SK194 Hitachi Semiconductor, 3SK194 Datasheet - Page 6

• Manufacturer Part Number: 3SK194
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK194
6
20
16
12
10
8
4
0
8
6
4
2
0
Power Gain vs. Drain to Source Voltage
Drain to Source Voltage V
Noise Figure vs. Drain Current
4
4
Drain Current I
8
8
12
12
D
(mA)
V
I
f = 900 MHz
V
V
f = 900 MHz
D
G2S
DS
G2S
= 10 mA
DS
16
16
= 6 V
= 3 V
= 3 V
(V)
20
20
5
4
3
2
1
0
5
4
3
2
1
0
Drain to Source Voltage V
Noise Figure vs. Drain Current
4
4
Drain to Source Voltage
Drain Current I
Noise Figure vs.
8
8
12
12
D
(mA)
V
V
f = 200 MHz
V
I
f = 200 MHz
D
DS
G2S
G2S
= 10 mA
DS
16
16
= 6 V
= 3 V
= 3 V
(V)
20
20