NE688M03 NEC, NE688M03 Datasheet - Page 2

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NE688M03

Manufacturer Part Number
NE688M03
Description
NPN SILICON TRANSISTOR
Manufacturer
NEC
Datasheet
NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
IKF
ISE
ISC
IRB
VJC
BR
NR
IKR
NC
RE
RB
RC
BF
NE
IS
NF
0.549e-12
0.796e-12
3.8e-16
3.8e-15
3.5e-16
135.7
0.001
1.49
12.3
0.06
6.14
0.71
0.38
0.65
1.62
3.5
Q1
0.6
1.1
3.5
0.4
4.2
28
1
Parameters
Base
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
XTF
VTF
EG
FC
XTI
TF
ITF
KF
TR
AF
L
BX
1.5e-14
11e-12
32e-12
0.48
0.56
0.75
0.75
0.36
0.65
0.61
1.11
1.22
L
Q1
50
B
0
0
0
3
C
(1)
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
C
CE
Parameter
time
capacitance
inductance
resistance
voltage
current
C
CEPKG
Q1
Parameters
C
C
L
L
C
C
L
L
L
L
B
E
BX
CX
EX
CX
CB
CE
CBPKG
CEPKG
0.1 to 5.0 GHz
V
11/98
CE
= 0.5 V to 3 V, I
Collector
C
= 0.5 mA to 10 mA
0.24e-12
0.27e-12
0.5e-9
0.6e-9
0.08e-12
0.08e-12
0.12e-9
0.10e-9
0.12e-9
688M03
seconds
farads
henries
ohms
volts
amps
Units

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