PBSS5160T NXP Semiconductors, PBSS5160T Datasheet - Page 2

• Manufacturer Part Number: PBSS5160T
• Description: 60V 1A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP low V
NPN complement: PBSS4160T.
MARKING
Note
1. * = p: made in Hong Kong
ORDERING INFORMATION
2004 May 27
PBSS5160T
PBSS5160T
TYPE NUMBER
Low collector-emitter saturation voltage V
High collector current capability: I
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power
transistors BCP52 and BCX52.
Major application segments:
– Automotive
– Telecom infrastructure
– Industrial.
Power management:
– DC-to-DC conversion
– Supply line switching.
Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
60 V, 1 A
PNP low V
* = t: made in Malaysia
* = W: made in China.
and LEDs)
buzzers and motors).
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
NAME
(BISS) transistor
U6*
MARKING CODE
C
and I
plastic surface mounted package; 3 leads
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
V
I
I
R
1
2
3
handbook, halfpage
DESCRIPTION
SYMBOL
C
CM
CEO
CEsat
PACKAGE
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
1
PARAMETER
3
base
emitter
collector
2
www.DataSheet4U.com
MAM256
Product specification
DESCRIPTION
PBSS5160T
1
330
MAX.
60
1
2
VERSION
SOT23
3
2
V
A
A
m
UNIT