PBSS5240T Philips Semiconductors, PBSS5240T Datasheet - Page 5

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PBSS5240T

Manufacturer Part Number
PBSS5240T
Description
PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
2004 Jan 15
handbook, halfpage
handbook, halfpage
V BEsat
40 V, 2 A
PNP low V
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(V)
CE
/I
h FE
1000
1200
1000
B
800
600
400
200
800
600
400
200
= 2V.
= 20.
amb
amb
amb
amb
amb
amb
0
10
10
= 150 C.
= 25 C.
= 55 C.
= 55 C.
= 25 C.
= 150 C.
1
DC current gain as a function of collector
current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
1
1
1
(1)
(2)
(3)
(1)
(2)
(3)
CEsat
10
10
(BISS) transistor
10
10
2
2
10
10
3
I C (mA)
3
I C (mA)
MHC064
MHC066
10
10
4
4
5
handbook, halfpage
handbook, halfpage
V CEsat
(mV)
V BE
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
(mV)
CE
/I
1200
1000
B
800
600
400
200
10
10
= 2V.
= 20.
10
amb
amb
amb
amb
amb
amb
10
0
1
3
2
10
= 55 C.
= 25 C.
= 150 C.
= 150 C.
= 25 C.
= 55 C.
1
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
PBSS5240T
Product specification
10
10
3
I C (mA)
I C (mA)
3
MHC067
MHC068
10
10
4
4

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