PBSS9110Y Philips Semiconductors, PBSS9110Y Datasheet - Page 6

• Manufacturer Part Number: PBSS9110Y
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
Table 7:
T
[1]
9397 750 12844
Product data sheet
Symbol
I
I
I
h
V
R
V
V
f
C
CBO
CES
EBO
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
300 s;
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
f = 100 MHz
I
f = 1 MHz
C
C
C
C
C
C
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
= 150 C
= I
= 250 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; V
= 50 mA; V
= 4 V; I
= 80 V; I
= 80 V; I
= 80 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
e
= 0 A; V
B
B
B
CE
= 100 mA
= 100 mA
= 100 mA
C
C
C
C
C
E
E
Rev. 01 — 9 June 2004
= 0 A
= 1 mA
= 250 mA
= 0.5 A
= 1 A
CB
= 5 V
CE
BE
B
B
= 0 A
= 0 A;
= 25 mA
= 50 mA
= 10 V;
= 0 V
= 10 V;
[1]
[1]
[1]
100 V, 1 A PNP low V
Min
-
-
-
-
150
150
150
125
-
-
-
-
-
-
100
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
-
-
-
-
-
-
-
170
-
-
-
-
PBSS9110Y
CEsat
Max
-
-
450
-
320
-
17
100
50
100
100
120
180
320
1.1
1.0
(BISS) transistor
Unit
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
A
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