DST857BDJ Diodes, DST857BDJ Datasheet - Page 3

• Manufacturer Part Number: DST857BDJ
• Description: DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
• Manufacturer: Diodes

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
Notes:
DST857BDJ
Document number: DS32037 Rev. 1 - 2
4. Short duration pulse test used to minimize self-heating effect.
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Characteristic (Note 4)
0
-V , COLLECTOR-EMITTER VOLTAGE (V)
I = -1.2mA
B
CE
1
Fig. 4 Typical Collector Current
I = -1.4mA
B
vs. Collector-Emitter Voltage
2
I = -1.6mA
B
@T
I = -1.8mA
B
3
A
= 25°C unless otherwise specified
I = -0.6mA
I = -0.4mA
I = -0.2mA
I = -1mA
I = -0.8mA
I = -2mA
B
B
B
B
B
B
4
V
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)CES
(BR)EBO
I
CE(sat)
C
BE(sat)
BE(on)
h
CBO
f
obo
FE
T
www.diodes.com
5
-600
3 of 5
Min
100
200
100
-50
-50
-45
-6
-
-
-
-
-
-
Typical
-100
-300
-760
-885
-670
-715
-8.5
340
330
340
600
550
500
450
400
350
300
250
200
150
100
-90
-65
-70
2.0
50
-
0
Fig. 5 Typical DC Current Gain vs. Collector Current
0
T = 125°C
A
-1000
-1100
-175
-500
-780
-850
Max
T = 85°C
T = 25°C
T = -55°C
-15
470
A
A
A
T = 150°C
-I , COLLECTOR CURRENT (mA)
-
-
-
-
-
-
-
A
C
1
MHz
Unit
mV
mV
mV
nA
pF
V
V
V
V
-
10
I
I
I
I
V
I
I
I
I
I
I
I
I
V
f = 100MHz
V
C
C
C
E
C
C
C
C
C
C
C
C
CB
CE
CB
= -10mA, I
= -10μA, I
= -10μA, I
= -1mA, I
= -1μA, I
= -10μA, V
= -2.0mA, V
= -100mA, I
= -10mA, I
= -100mA, I
= -2.0mA, V
= -10mA, V
= -30V
= -5V, I
= -10V, f = 1.0MHz
www.DataSheet4U.com
Test Condition
C
B
100
C
V
B
B
B
= 0
B
CE
= 0
DST857BDJ
= -10mA,
CE
= 0
= 0
B
B
= -0.5mA
CE
= -0.5mA
CE
CE
= 5V
= -5.0mA
= -5.0mA
= -5V
= -5V
= -5V
= -5V
© Diodes Incorporated
January 2010
1,000