DMBT1015 Dc Components, DMBT1015 Datasheet

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DMBT1015

Manufacturer Part Number
DMBT1015
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Classification of h
Designed for use in driver stage of AF amplifier and
general purpose amplification.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Range
Rank
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
120~240
DC COMPONENTS CO., LTD.
FE1
Y
DISCRETE SEMICONDUCTORS
(1)
(1)
(T
200~400
Symbol
V
V
V
A
T
=25
P
CBO
CEO
EBO
T
STG
G
I
Symbol
C
V
V
D
BV
BV
BV
J
I
CE(sat)
h
h
I
BE(sat)
C
CBO
EBO
o
FE1
FE2
f
CBO
CEO
EBO
T
ob
C)
-55 to +150
Rating
+150
-150
225
-50
-50
Min
120
-50
-50
-5
25
80
350~700
-5
-
-
-
-
-
B
Typ
Unit
mW
mA
o
o
-
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
Max
-100
-100
-0.3
-1.1
700
7
-
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
3
nA
nA
pF
V
V
V
V
V
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
I
I
I
V
V
I
I
I
I
I
V
.063(1.60)
.055(1.40)
C
C
E
C
C
C
C
C
CB
EB
CB
=-10 A
=-100 A
=-1mA
=-100mA, I
=-100mA, I
=-2mA, V
=-150mA, V
=-1mA, V
.051(1.30)
.035(0.90)
Max
=-5V
=-50V
=-10V, f=1MHz, I
Test Conditions
.108(0.65)
.089(0.25)
DMBT1015
CE
CE
B
B
=-6V
=-10V, f=100MHz
CE
=-10mA
=-10mA
.027(0.67)
.013(0.32)
=-6V
E
.0043(0.11)
.0035(0.09)
SOT-23
=0

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