PN150 Panasonic Semiconductor, PN150 Datasheet

PN150

Manufacturer Part Number

PN150

Description

Silicon planar type For optical control systems

Manufacturer

Panasonic Semiconductor

Datasheet

1.PN150.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

PN150

Manufacturer:

EVERLIGHT

Quantity:

2 000

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Download datasheet (133Kb)

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Phototransistors

PNZ150

Silicon planar type

For optical control systems

■ Features

■ Absolute Maximum Ratings T

■ Electrical-Optical Characteristics T

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: April 2004

• High sensitivity

• Wide spectral sensitivity characteristics, suited for detecting GaAs

• Low dark current

• Side-view plastic mold type package

Collector-emitter voltage (Base open)

Collector current

Collector power dissipation

Operating ambient temperature

Storage temperature

Photocurrent

Dark current

Peak emission wavelength

Half-power angle

Rise time

Fall time

Collector-emitter saturation voltage

LEDs

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2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.

3. This device is designed be dis regarded radiation.

4. * 1: Source: Tungsten (color temperature 2 856 K)

* 2: Switching time measurement circuit

* 2

Parameter

50 Ω

* 1

Sig. in

(PN150)

* 1

Symbol

Sig. out

Symbol

CEO

opr

stg

CE(L)

CE(sat)

CEO

= 25°C

(Input pulse)

(Output pulse)

−30 to +100

−25 to +85

= 25°C ± 3°C

Rating

The angle from which photocurrent

becomes 50%

CE(L)

100

Note) The part number in the parenthesis shows conventional part number.

SHE00018BED

= 10 V, L = 500 lx

= 10 V

= 10 V, I

= 1 mA, L = 1 000 lx

Conditions

Unit

CE(L)

°C

= 5 mA, R

90%

10%

= 100 Ω

φ3.5

: Rise time

±0.2

Fall time

(R1.75)

Min

1.0

4.5

(2.54)

±0.3

0.01

2-0.98

2-0.45

Typ

800

3.0

0.2

LSTLR102-003 Package

±0.2

±0.15

Max

1.00

0.45

0.5

(2.3)

±0.15

4.2

1: Emitter

2: Collector

(1.2)

Unit: mm

±0.3

(1.9)

Unit

µA

µs

Related parts for PN150

PN150 Summary of contents

Page 1

... Phototransistors PNZ150 (PN150) Silicon planar type For optical control systems ■ Features • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current • Side-view plastic mold type package ■ Absolute Maximum Ratings T Parameter ...

Page 2

PNZ150  120 100 − Ambient temperature T a  CE( 856 ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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