DN3125 Supertex, DN3125 Datasheet
DN3125
Manufacturer Part Number
DN3125
Description
N-Channel Depletion-Mode Vertical DMOS FETs
Manufacturer
Supertex
Datasheet
1.DN3125.pdf
(2 pages)
www.DataSheet4U.com
DataSheet U .com
Ordering Information
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
*
Die in wafer form.
4
BV
BV
250V
DSX
DGX
/
R
(max)
20Ω
DS(ON)
200mA
(min)
I
DSS
N-Channel Depletion-Mode
Vertical DMOS FETs
-55°C to +150°C
Order Number / Package
BV
BV
± 20V
DGX
DSX
DN3125NW
Die*
1
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
DN3125
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DN3125 Summary of contents
Page 1
... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. BV DSX BV DGX ± 20V -55°C to +150°C 1 DN3125 ...
Page 2
... V = 25V 150mA 25Ω, GEN -10V GS 1 -5.0V 150mA -5.0V 150mA PULSE GENERATOR R gen INPUT 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com DN3125 L OUTPUT D.U.T. 12/13/010 ...