DN3535 Supertex, DN3535 Datasheet

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DN3535

Manufacturer Part Number
DN3535
Description
N-Channel Depletion-Mode Vertical DMOS FETs
Manufacturer
Supertex
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DN3535N8-G
Manufacturer:
SUPERTEX
Quantity:
8 000
www.DataSheet4U.com
DataSheet U .com
Ordering Information
*
** Die in wafer form.
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Distance of 1.6 mm from case for 10 seconds.
Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
4
BV
BV
350V
DSX
DGX
/
R
(max)
10Ω
DS(ON)
200mA
(min)
I
DSS
N-Channel Depletion-Mode
Vertical DMOS FETs
55°C to +150°C
TO-243AA*
DN3535N8
Order Number / Package
BV
BV
300°C
± 20V
DGX
DSX
1
DN3535NW
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Die**
Product marking for TO-243AA:
Where *= 2-week alpha date code
TO-243AA
G
(SOT-89)
D
S
DN5S*
D
DN3535

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DN3535 Summary of contents

Page 1

... Package Option BV DSX BV DGX ± 20V 55°C to +150°C 300°C 1 DN3535 Product marking for TO-243AA: DN5S* Where *= 2-week alpha date code TO-243AA (SOT-89) ...

Page 2

... V = -5.0V 25V 150mA 25Ω, GEN -10V GS 1 -5.0V -5.0V PULSE GENERATOR R gen INPUT DN3535 * I DR DRM 500mA = 1.0µ Max Rating DS = 0.8 Max Rating DS =10V DS = 25V, f =1.0Mhz DS = 150mA = 150mA OUTPUT D.U.T. ...

Page 3

... -55° 25°C 0.6 0.8 100 1000 3 Saturation Characteristics 1.0 0.8 0.6 0.4 0.2 0 (Volts) Power Dissipation vs. Case Temperature 2.0 TO-243AA 1.5 1.0 0.5 0 100 125 T C (°C) Thermal Response Characteristics 1.0 TO-243AA P = 1. 25°C C 0.6 0.4 0.2 0 0.001 0.01 0.1 1 (seconds) DN3535 VGS = +2V 0V -0.5V -0.8V -1V -1.5V -2V 10 150 10 ...

Page 4

... R DS(on) @ 0V, 150mA 0.6 0.4 -50 - 100 125 150 T J (°C) Gate Drive Dynamic Characteristics 150mA =40V 500 1000 1500 Q (picocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com DN3535 1.0 2.4 2.0 1.6 1.2 0.8 0.4 2000 12/13/010 ...

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