DZT3150 Diodes Incorporated, DZT3150 Datasheet - Page 2

• Manufacturer Part Number: DZT3150
• Description: NPN SURFACE MOUNT TRANSISTOR
• Manufacturer: Diodes Incorporated

Electrical Characteristics
Typical Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes:
DS30785 Rev. 3 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
*
3.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
Device mounted on FR-4 PCB, pad layout as shown on page 4.
Characteristic
@T
@T
amb
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
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Symbol
V
V
V
2 of 4
(BR)CEO
CE(SAT)
BE(SAT)
C
I
I
h
CBO
EBO
f
obo
FE
T
Min
250
150
25
50
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Collector Current vs. Collector Emitter-Voltage
Typ
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.35
0.50
1.10
1.40
500
1.0
1.0
50
⎯
⎯
⎯
⎯
Unit
MHz
μA
μA
pF
⎯
V
V
V
V
V
Test Condition
I
V
V
I
I
I
I
I
I
I
I
f = 200MHz
V
C
C
C
C
C
C
C
C
C
CB
EB
CB
= 10mA, I
= 3.0A, I
= 3.0A, I
= 500mA, V
= 4.0A, I
= 4.0A, I
= 2.0A,
= 5.0A,
= 50mA, V
= 50V, I
= 7.0V, I
= 10V, I
B
B
B
B
B
B
B
B
B
E
E
= 150mA*
= 150mA*
= 200mA*
= 200mA*
C
B
CE
= 0
= 0
V
V
= 0, f = 1MHz
= 0
© Diodes Incorporated
CE
CE
CE
= 6.0V,
= 2.0V*
= 2.0V*
= 2.0V*
DZT3150