DZT853 Diodes Incorporated, DZT853 Datasheet - Page 2

• Manufacturer Part Number: DZT853
• Description: NPN SURFACE MOUNT TRANSISTOR
• Manufacturer: Diodes Incorporated

Electrical Characteristics
Typical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Switching Times
Notes:
DS30737 Rev. 3 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
*
3.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
Device mounted on FR-4 PCB, pad layout as shown on page 4.
Characteristic
@T
@T
amb
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Symbol
V
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
BE(ON)
www.diodes.com
h
CBO
EBO
t
t
f
on
off
FE
obo
T
2 of 4
Min
200
100
100
100
50
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
Fig. 2 Collector Current vs. Collector Emitter-Voltage
1650
Typ
130
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
35
50
1250
1100
Max
150
340
300
10
10
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
MHz
mV
mV
mV
nA
μA
nA
pF
⎯
ns
ns
V
V
V
Test Condition
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
E
C
C
C
C
CE
C
C
C
C
C
C
B1
CB
CB
EB
CB
= 0.1A, I
= 5A, I
= 10mA, V
= 100μA, I
= 100μA, I
= 10mA*, I
= 2A, I
= 5A, I
= 2A, V
= 4A, V
= 10A, V
= 100mA, V
= 1A, V
= I
= 5A, V
= 150V, I
= 150V, I
= 6V, I
= 10V, f = 1MHz
B2
= 100mA
B
B
B
B
CE
CE
CC
B
B
= 500mA*
= 100mA*
= 500mA*
C
B
CE
CE
B
= 5mA*
= 0
= 2V*
= 2V*
= 10V
E
C
CE
B
E
E
= 2V*
= 2V*
B
= 0
= 0
CE
= 0
= 0
= 0, T
= 2V*
= 10V,
© Diodes Incorporated
A
= 100°C
DZT853