DZT953 Diodes Incorporated, DZT953 Datasheet - Page 2

• Manufacturer Part Number: DZT953
• Description: PNP SURFACE MOUNT TRANSISTOR
• Manufacturer: Diodes Incorporated

Electrical Characteristics
Typical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Switching Times
Notes:
DS30941 Rev. 5 - 2
*
Measured under pulsed conditions. Pulse width = 300
Fig. 1 Power Dissipation
3.
Device mounted on FR-4 PCB, pad layout as shown on page 4.
Characteristic
VS
. Ambient Temperature (Note 3)
@T
@T
amb
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
μ
s
.
Duty cycle ≤2%
Symbol
V
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
BE(ON)
www.diodes.com
h
CBO
EBO
t
t
f
on
off
FE
obo
T
2 of 4
-140
-100
Min
100
100
50
30
-6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Collector Current vs. Collector Emitter Voltage
-1010
-160
-300
-925
Typ
125
110
460
-20
-90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
15
65
-1170
-1160
-115
-220
-420
Max
300
-50
-10
-50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
Unit
MHz
mV
mV
mV
nA
μA
nA
pF
⎯
ns
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
E
C
C
C
C
C
CE
C
C
C
C
C
C
C
B2
CB
CB
EB
CB
= -100mA, I
= -4A, I
= -10mA, V
= -100μA, I
= -100μA, I
= -10mA*, I
= -1A, I
= -2A, I
= -4A, I
= -1A, V
= -3A, V
= -4A, V
= -10A, V
= -100mA, V
= -2A, I
= 200mA, V
= -4A, V
= -100V, I
= -100V, I
= - 6V, I
= -10V, f = 1MHz
B
B
B
B
B1
Test Condition
B
B
B
B
CE
CE
CE
= -400mA*
= -100mA*
= -200mA*
= -400mA*
CE
CE
C
= -200mA
= -1V*
= -1V*
= -1V*
E
C
CE
B
= 0
B
E
E
= -1V*
= -1V*
B
B
CC
= 0
= 0
CE
= 0
= -10mA*
= 0
= 0, T
= -1V*
= -10V,
= -10V
© Diodes Incorporated
A
= 100°C
DZT953