DXT2222A Dc Components, DXT2222A Datasheet
DXT2222A
Manufacturer Part Number
DXT2222A
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DXT2222A.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DXT2222A-13
Manufacturer:
DIODES/美台
Quantity:
20 000
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
1 = Base
2 = Collector
3 = Emitter
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Designed for general purpose amplifier and high
-speed, medium-power switching applications.
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
(1)
(T
Symbol
V
V
V
T
A
P
=25
T
CBO
CES
EBO
STG
I
C
D
J
Symbol
V
V
V
V
BV
BV
BV
o
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
h
h
h
h
h
h
C)
I
I
CBO
CEX
EBO
FE1
FE2
FE3
FE4
FE5
FE6
f
CBO
CEO
EBO
T
-55 to +150
Rating
+150
600
1.2
75
40
6
Min
100
300
75
40
35
50
75
40
50
6
-
-
-
-
-
-
-
Typ
Unit
mA
o
o
W
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
Max
300
.167(4.25)
.159(4.05)
0.3
1.2
.020(0.51)
.014(0.36)
10
10
50
1
2
-
-
-
-
-
-
-
-
-
Unit
MHz
nA
nA
nA
V
V
V
V
V
V
V
-
-
-
-
-
-
Dimensions in inches and (millimeters)
1
.066(1.70)
.059(1.50)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
V
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CE
=10 A
=10mA
=10 A
=150mA, I
=500mA, I
=150mA, I
=500mA, I
=100 A, V
=1mA, V
=10mA, V
=150mA, V
=500mA, V
=150mA, V
2
.060(1.52)
.058(1.48)
=60V
=60V, V
=3V
=20V, f=100MHz, I
Test Conditions
CE
3
EB(off)
CE
B
B
B
B
DXT2222A
CE
=10V
CE
CE
CE
=15mA
=50mA
=15mA
=50mA
=10V
=10V
=10V
=10V
=1V
.102(2.60)
.095(2.40)
=3V
C
.016(0.41)
.014(0.35)
=20mA
SOT-89
.063(1.60)
.055(1.40)
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