SXT3906 Siemens Semiconductor, SXT3906 Datasheet - Page 2

• Manufacturer Part Number: SXT3906
• Description: PNP Silicon Switching Transistor
• Manufacturer: Siemens Semiconductor

Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
Collector-emitter cutoff current
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base-emitter saturation voltage
I
I
1)
Semiconductor Group
C
C
E
C
C
C
C
C
C
C
C
C
CB
CE
= 10 A
= 1 mA
= 10 A
= 100 A, V
=
= 10 mA, V
= 50 mA, V
= 100 mA, V
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
Pulse test conditions:
A
= 30 V
= 30 V, V
= 25 ˚C, unless otherwise specified.
1 mA, V
B
B
B
B
BE
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
CE
CE
CE
CE
= – 3 V
= 1 V
= 1 V
= 1 V
= 1 V
= 1 V
t
300 s, D
1)
2 %.
1)
2
Symbol
V
V
V
I
I
h
V
V
CB0
CEV
FE
(BR)CE0
(BR)CB0
(BR)EB0
CEsat
BEsat
min.
40
40
5
–
–
60
80
100
60
30
–
–
0.65
–
Values
typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
max.
–
–
–
50
50
–
–
300
–
–
0.25
0.4
0.85
0.95
SXT 3906
Unit
V
nA
–
V