SXTA43 Siemens Semiconductor, SXTA43 Datasheet
首页 Datasheets Transistors (BJT) - Single SXTA43
Manufacturer Part Number
SXTA43
Description
(SXTA42 / SXTA43) NPN Silicon High Voltage Transistors
Manufacturer
Siemens Semiconductor
Type
SXTA 42
SXTA 43
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation, T
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
2)
NPN Silicon High Voltage Transistors
Semiconductor Group
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm
High breakdown voltage
Low collector-emitter saturation voltage
Marking
1D
1E
2)
S
= 130 ˚C
Ordering Code
(tape and reel)
Q68000-A8394
Q68000-A8650
Symbol
V
V
V
I
P
T
T
R
R
C
j
stg
CE0
CB0
EB0
tot
th JA
th JS
1
SXTA 42
300
300
2
Cu.
Pin Configuration
B
1
– 65 … + 150
Values
C
2
500
150
6
1
75
20
SXTA 43
200
200
E
3
Package
SOT-89
SXTA 42
SXTA 43
Unit
V
mA
W
˚C
K/W
1)
5.91
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SXTA43 Summary of contents
NPN Silicon High Voltage Transistors High breakdown voltage Low collector-emitter saturation voltage Type Marking SXTA 42 1D SXTA 43 1E Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature ...
Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC characteristics Collector-emitter breakdown voltage Collector-base breakdown voltage = 100 Emitter-base breakdown voltage = 100 Collector cutoff ...
Total power dissipation P * Package mounted on epoxy Permissible pulse load P tot max Semiconductor Group = Transition frequency f tot 100 MHz ...
Collector cutoff current I CB0 = 160 current gain Semiconductor Group = Collector current ...
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