DMJxxxx Alpha, DMJxxxx Datasheet

no-image

DMJxxxx

Manufacturer Part Number

DMJxxxx

Description

Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

Manufacturer

Alpha

Datasheet

1.DMJXXXX.pdf (8 pages)

Current page: 1 of 8
Download datasheet (150Kb)

www.DataSheet4U.com

3–12

Silicon Beam–Lead

Schottky Barrier Mixer Diodes

DME, DMF and DMJ Series

Features

Description

Alpha beam–lead and chip Schottky barrier mixer

diodes are designed for applications through 40 GHz

in Ka–band. The beam–lead design eliminates the

problem of bonding to the very small junction area

that is characteristic of the low capacitance involved

in microwave devices.

Beam–lead Schottky barrier mixer diodes are made

by the deposition of a suitable barrier metal on an

epitaxial silicon substrate to form the junction. The

process and choice of materials result in low series

resistance along with a narrow spread of capacitance

values for close impedance control.

A variety of forward knees are available, ranging from

a low value for low, or starved, local oscillator drive

levels to a higher value for high drive, low intermode

mixer applications. The beam–lead diodes are

available in a wide range of packages as shown.

Capacitance ranges and series resistances are

comparable with the packaged devices that are

available through K–band. The unmounted diodes

are especially well suited for use in microwave

integrated circuits. The mounted devices can be

easily inserted as hybrid elements in stripline,

microstrip or other such circuitry.

Alpha Industries

Ideal for MIC

Low 1/f Noise

Low Intermodulation Distortion

Low Turn On

Hermetically Sealed Packages

SPC Controlled Wafer Fabrication

Fax

E-mail

Beam–lead and chip Schottky barrier diodes are

categorized by noise figure for mixer applications in

four frequency ranges: S, X, Ku and Ka–bands.

However, they can also be used as modulators, high

speed switches and low power limiters.

Several types of semiconductor–barrier metal

systems are available, thus allowing proper selection

for optimum mixer design. For most applications the

N–type silicon, low drive types are preferable,

especially for starved LO mixers.

Beam–lead diodes are ideally suited for balanced

mixers, since they exhibit low parasitics and are

extremely uniform. A typical V

in Figure 1. Typical noise figures vs LO drive is shown

in Figure 2 for single N–type, low drive diode types.

Maximum Ratings

Storage Temperature:

Operating Temperature:

Dissipated Power:

Max Current:

Visit our web site:

F

vs. I

–65 C/+175 C

–65 C/+175 C

75 mW/Junction

100 mA

F

curve is shown

Related parts for DMJxxxx

Related keywords

DMJxxxx datasheet
DMJxxxx data sheet
DMJxxxx pdf datasheet
DMJxxxx component
DMJxxxx part
DMJxxxx distributor
DMJxxxx RoHS
DMJxxxx datasheet download