BD13003B SeCoS, BD13003B Datasheet
BD13003B
Manufacturer Part Number
BD13003B
Description
NPN Plastic Encapsulated Transistor
Manufacturer
SeCoS
Datasheet
1.BD13003B.pdf
(2 pages)
http://www.SeCoSGmbH.com/
23-Jun-2011 Rev. A
www.DataSheet4U.net
ABSOLUTE MAXIMUM RATINGS
FEATURES
CLASSIFICATION OF t
ELECTRICAL CHARACTERISTICS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Storage time
Power Switching Applications
Product-Rank
Product-Rank
Range
Range
Elektronische Bauelemente
Parameter
Parameter
BD3DD13003-A1
BD3DD13003-B1
2-2.5 (µs)
3-3.5 (µs)
s
(T
A suffix of “-C” specifies halogen & lead-free
BD3DD13003-A2
BD3DD13003-B2
A
(T
Symbol
V
V
V
= 25° C unless otherwise specified)
2.5-3 (µs)
3.5-4 (µs)
V
V
h
h
A
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
CE(sat)
BE(sat)
FE (1)
FE (2)
CBO
CEO
EBO
f
t
= 25° C unless otherwise specified)
t
T
S
f
RoHS Compliant Product
Symbol
T
J
V
V
V
, T
P
Base
CBO
CEO
EBO
I
C
1
C
STG
Min.
700
400
20
9
5
5
2
-
-
-
-
-
-
Collector
Emitter
Typ.
2
3
-
-
-
-
-
-
-
-
-
-
-
-
-
NPN Plastic Encapsulated Transistor
Max.
0.5
0.6
1.2
0.5
30
1
1
4
-
-
-
-
-
150, -55~150
Rating
700
400
1.5
1.5
9
Unit
MHz
BD13003B
mA
mA
mA
µs
µs
V
V
V
V
V
Any changes of specification will not be informed individually.
1.5A , 700V
REF.
A
B
C
D
E
F
G
I
I
I
V
V
V
V
V
I
I
V
I
I
C
C
E
C
C
C
C
CB
CE
EB
CE
CE
CE
=2mA, I
=5mA, I
=10mA, I
=1A, I
=1A, I
=1A,I
=250mA (UI9600)
F
K
G
10.60
15.30
L
Min.
7.40
2.50
3.70
3.90
=700V, I
=400V, I
=9V, I
=5V, I
=5V, I
=10V, I
Millimeter
2.29 TYP.
E
B1
Test Conditions
A
B
B
=250mA
=250mA
15.70
= -I
11.00
Max.
7.80
2.90
3.90
4.10
C
C
C
E
C
TO-126
=0
=0.5A
=1.5A
=0
=0
C
B
=100mA, f =1MHz
=0
E
B
B2
M
N
=0
=0
=0.2A,V
REF.
M
H
K
L
N
J
H
J
B
Unit
Min.
1.10
0.45
0.66
2.10
1.17
3.00
° C
CC
W
V
V
V
A
Page 1 of 2
Millimeter
=100V
C
D
Max.
1.50
0.60
0.86
2.30
1.37
3.20
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BD13003B Summary of contents
Page 1
... CBO 0.5 CEO EBO ( ( 0.6 CE(sat 1.2 BE(sat 0 BD13003B 1.5A , 700V TO-126 Millimeter REF. REF. Min. Max. Min. A 7.40 7.80 H 1.10 B 2.50 2.90 J 0.45 C 10.60 11.00 K 0.66 D 15.30 15.70 L 2.10 E 3.70 3.90 M 1.17 F 3.90 4.10 N 3.00 G 2.29 TYP. Rating Unit ...
Page 2
... Elektronische Bauelemente CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 23-Jun-2011 Rev. A BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page ...