BD132 Philips Semiconductors, BD132 Datasheet - Page 4

• Manufacturer Part Number: BD132
• Description: PNP power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
1997 Mar 04
handbook, full pagewidth
I
I
h
V
V
f
SYMBOL
j
CBO
EBO
T
FE
= 25 C unless otherwise specified.
CEsat
BEsat
PNP power transistor
V
CE
h FE
160
120
= 1 V.
80
40
0
10
1
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
PARAMETER
1
Fig.2 DC current gain; typical values.
10
I
I
I
I
I
I
I
I
I
I
f = 100 MHz; T
E
E
C
C
C
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 0.5 A; V
= 2 A; V
= 0.5 A; I
= 2 A; I
= 0.5 A; I
= 2 A; I
= 0.25 A; V
4
CB
CB
EB
B
B
= 40 V
= 40 V; T
= 3 V
CONDITIONS
CE
= 200 mA
= 200 mA
B
B
CE
= 50 mA
= 50 mA
= 1 V; see Fig.2
amb
CE
= 12 V
10
= 5 V;
= 25 C
2
j
= 150 C
10
3
40
20
60
MIN.
I C (mA)
Product specification
MAX.
50
10
50
300
700
1.2
1.5
MGD841
BD132
10
nA
nA
mV
mV
V
V
MHz
4
A
UNIT