BD135-10 Philips Semiconductors, BD135-10 Datasheet - Page 2

• Manufacturer Part Number: BD135-10
• Description: NPN power transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 12
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
High current (max. 1.5 A)
Low voltage (max. 80 V).
Driver stages in hi-fi amplifiers and television circuits.
CBO
CEO
EBO
tot
NPN power transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BD135
BD137
BD139
BD135
BD137
BD139
PARAMETER
open emitter
open base
open collector
T
mb
70 C
2
CONDITIONS
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Simplified outline (TO-126; SOT32) and
symbol.
1
2
emitter
collector, connected to metal part of
mounting surface
base
BD135; BD137; BD139
3
Top view
65
65
MIN.
DESCRIPTION
3
Product specification
45
60
100
45
60
80
5
1.5
2
1
8
+150
150
+150
MAX.
MAM254
2
1
V
V
V
V
V
V
V
A
A
A
W
C
C
C
UNIT