KSE700 Fairchild Semiconductor, KSE700 Datasheet

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KSE700

Manufacturer Part Number
KSE700
Description
Monolithic Construction With Built-in Base- Emitter Resistors
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : h
• Complement to KSE800/801/802/803
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
I
I
P
T
V
V
V
T
BV
I
I
I
h
V
Sym-
C
B
CEO
CBO
EBO
bol
J
FE
EBO
C
STG
CE
CBO
CEO
Symbol
BE
CEO
(sat)
(on)
Collector- Base Voltage
Collector-Emitter Voltage : KSE700/701
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Parameter
FE
= 750 (Min.) @ I
Parameter
C
=25 C)
: KSE700/701
: KSE702/703
: KSE700/701
: KSE702/703
: KSE700/702
: KSE701/703
: ALL DEVICES
: KSE700/702
: KSE701/703
: ALL DEVICES
: KSE700/702
: KSE701/703
: ALL DEVICES
: KSE700/701
: KSE702/703
: KSE702/703
KSE700/701/702/703
T
C
=25 C unless otherwise noted
T
C
C
= -1.5 and -2.0A DC
=25 C unless otherwise noted
- 55 ~ 150
I
V
V
V
V
@T
V
V
V
V
I
I
I
V
V
V
C
C
C
C
CE
CE
CB
CB
BE
CE
CE
CE
CE
CE
CE
Value
= - 10mA, I
= - 1.5A, I
= - 2A, I
= - 4A, I
- 0.1
- 80
- 60
- 80
150
- 60
C
- 5
- 4
40
= - 60V, I
= - 80V, I
= Rated BV
= Rated BV
= - 5V, I
= - 3V, I
= - 3V, I
= - 3V, I
= - 3V, I
= - 3V, I
= - 3V, I
= 100 C
B
B
Test Condition
C
= - 40mA
= - 40mA
C
C
C
B
C
C
C
B
B
B
= 0
= - 30mA
= - 1.5A
= - 2A
= - 4A
= - 1.5A
= - 2A
= - 4A
Unit
= 0
= 0
= 0
W
CEO
CEO
V
V
V
V
V
A
A
s
C
C
, I
, I
E
E
= 0
= 0
1
1. Emitter
B
R 1 10 k
R 2 0.6 k
Equivalent Circuit
2.Collector
R1
Min.
750
750
100
-60
-80
TO-126
R2
Max.
-100
-100
-100
-500
-2.5
-2.8
-1.2
-2.5
-3
-2
-3
3.Base
C
E
Rev. A2, June 2001
Units
mA
V
V
V
V
V
V
V
V
A
A
A
A

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KSE700 Summary of contents

Page 1

... High DC Current Gain : h = 750 (Min • Complement to KSE800/801/802/803 PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Sym- Parameter bol V Collector- Base Voltage CBO V Collector-Emitter Voltage : KSE700/701 CEO V Emitter- Base Voltage EBO I Collector Current C I Base Current B P Collector Dissipation (T ...

Page 2

... V (sat) CE -0.1 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage -100 -10 -1 MJE700/701 MJE702/703 -0.1 -1 -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 10k -100 s B 100 -0.01 1000 I = 500 100 10 1 -0.01 -1 -10 Figure 4. Collector Output Capacitance ...

Page 3

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A2, June 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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