BU4506 Philips Semiconductors, BU4506 Datasheet - Page 3

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BU4506

Manufacturer Part Number
BU4506
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
July 1999
Silicon Diffused Power Transistor
IBend
-VBB
Fig.3. Switching times waveforms (16 kHz).
VCE
IC
IB
IC
IB
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit .
LB
DIODE
20us
IB1
TRANSISTOR
ts
T.U.T.
64us
26us
+ 150 v nominal
adjust for ICsat
tf
Lc
10 %
90 %
ICsat
Cfb
- IB2
IB1
ICsat
IB2
t
t
t
t
t
3
Fig.8. Typical collector-emitter saturation voltage.
100
100
0.8
0.6
0.4
0.2
10
10
1
0
1
0.01
1
0.01
0.1
VCESAT / V
hFE
hFE
Fig.6. High and low DC current gain.
Fig.7. High and low DC current gain.
VCE = 1 V
VCE = 5 V
0.1
0.1
1
Product specification
1
1
BU4506AF
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
IC / A
IC / A
IC / A
Rev 1.000
10
10
10

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