BU4515AX Philips Semiconductors, BU4515AX Datasheet - Page 4

• Manufacturer Part Number: BU4515AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
June 1999
Silicon Diffused Power Transistor
Fig.8. Typical collector-emitter saturation voltage.
Fig.9. Typical base-emitter saturation voltage.
100
0.01
1.3
1.2
1.1
0.9
0.8
0.7
0.6
10
0.1
10
1
1
0.01
1
0
0.1
hFE
Fig.7. High and low DC current gain.
VBEsat/V
5V
IC/IB = 5
1
0.1
2
1
Ths = 25C
Ths = 85C
1
3
Ths = 85C
Ths = 85C
Ths = 25C
Ths = 85C
IC / A
IC / A
IB/A
10
10
4
4
Fig.10. Typical collector storage and fall time.
10
120
110
100
0.001
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0.01
0.5
0
0.1
10
Fig.11. Normalised power dissipation.
ts/tf/us
1
1E-06
Fig.12. Transient thermal impedance.
0
PD%
Zth / (K/W)
D = 0.5
0.05
0.02
0.2
0.1
I
Single pulse
1E-05
C
20
=6 A; T
PD% = 100 P
1
1E-04
40
j
pulse width, tp (s)
= 85˚C; f = 16kHz
1E-03
60
Ths / C
1.5
1E-02
80
Normalised Power Derating
D
/P
with heatsink compound
D 25˚C
P
D
Product specification
100
1E-01
tp
2
T
Ths 85 C
Freq = 16kHz
ICsat = 6A
BU4515AX
1E+00
120
D = tp/T
IB / A
t
Rev 1.000
1E+01
140
2.5