BU4522DX Philips Semiconductors, BU4522DX Datasheet - Page 2

• Manufacturer Part Number: BU4522DX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL RESISTANCES
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
July 1998
Silicon Diffused Power Transistor
SYMBOL
R
R
hs
SYMBOL
V
C
hs
SYMBOL
I
I
BV
R
V
V
V
h
h
V
hs
SYMBOL
t
t
t
t
CES
CES
s
f
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
F
th j-hs
th j-a
isol
be
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
Junction to heatsink
Junction to ambient
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
PARAMETER
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
2
CONDITIONS
R.H.
CONDITIONS
V
V
T
I
V
I
L = 25 mH
I
I
I
I
I
CONDITIONS
f = 16 kHz; I
(I
I
B
B
C
C
C
C
F
Csat
j
B2
BE
BE
EB
= 600 mA
= 0 A; I
= 7 A
= 7 A; I
= 7 A; I
= 1 A; V
= 7 A; V
= 125 ˚C
65 % ; clean and dustfree
= -3.5 A)
= 0 V; V
= 0 V; V
= 7.5 V
= t.b.f
CONDITIONS
with heatsink compound
in free air
2
C
B
B
CE
CE
= 100 mA;
= 1.75 A
= 1.75 A
CE
CE
Csat
= 5 V
= 5 V
= V
= V
= 7 A; I
CESMmax
CESMmax
B1
;
= 1.4 A;
MIN.
MIN.
0.85
800
7.5
4.2
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
TYP.
13.5
0.94
285
t.b.f
t.b.f
5.8
3.5
Objective specification
35
22
50
10
-
-
-
-
-
-
-
BU4522DX
MAX.
MAX.
MAX.
MAX.
2500
1.03
400
t.b.f
t.b.f
2.8
1.0
2.0
3.0
7.3
2.2
4.3
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
UNIT
K/W
K/W
mA
mA
pF
ns
ns
V
V
V
V
V
V
s
s