BU4540 Philips Semiconductors, BU4540 Datasheet - Page 2

• Manufacturer Part Number: BU4540
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 Measured with half sine-wave voltage (curve tracer).
January 1998
Silicon Diffused Power Transistor
mb
SYMBOL
I
I
I
BV
V
V
h
h
mb
SYMBOL
t
t
t
t
CES
CES
EBO
s
f
s
f
FE
FE
CEsat
BEsat
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
Collector cut-off current
Emitter cut-off current
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (32 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
Switching times (110 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
1
CONDITIONS
V
V
T
V
I
I
I
I
I
CONDITIONS
I
I
B
C
C
C
C
Csat
Csat
j
BE
BE
EB
= 1 mA
= 16 A; I
= 16 A; I
= 1A; V
= 16 A; V
= 125 ˚C
= 0 V; V
= 0 V; V
= 7.5 V; I
= 16 A;I
= 8 A;I
2
CE
B1
B
B
CE
B1
CE
CE
= 4 A
= 4 A
= 5 V
= 1.6 A; (I
C
= 5 V
= 3.2 A; (I
= V
= V
= 0 A
CESMmax
CESMmax
B2
B2
;
= -4.8A)
= -8A)
MIN.
t.b.f
7.5
4.2
-
-
-
-
-
TYP.
TYP.
5.35
t.b.f
t.b.f
t.b.f
t.b.f
t.b.f
Objective specification
14
-
-
-
-
-
BU4540AL
MAX.
MAX.
t.b.f
t.b.f
t.b.f
t.b.f
1.0
2.0
1.0
3.0
1.0
6.5
-
-
Rev 1.000
UNIT
UNIT
mA
mA
mA
V
V
V
s
s
s
s