BCP156 SeCoS, BCP156 Datasheet
BCP156
Manufacturer Part Number
BCP156
Description
Planar High Performance Transistor
Manufacturer
SeCoS
Datasheet
1.BCP156.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP156
Manufacturer:
SECOS
Quantity:
20 000
01-Jun-2002 Rev. A
www.DataSheet4U.net
http://www.SeCoSGmbH.com
Absolute Maximum Ratings at T
ELECTRICAL CHARACTERISTICS Tamb=25
*
Description
The BCP156 is designed for general purpose
Features
switching and amplifier applications.
* 3 Amp Continuous Current
* 60 Volt V
* Low Saturation Voltage
Measured under pulse condition.
Spice parameter data is available upon request for this device.
Emitter-Base Breakdown Voltage
Gain-Bandwidth Product
Output Capacitance
Time-On
Time-Off
Collector-Emitter Breakdown Voltage
Emitter-Base Cutoff Current
Collector Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Base Cutoff Current
Base-Emitter Saturation Voltage
DC Current Gain
Symbol
T
V
V
V
I
P
J,
CBO
CEO
EBO
C
T
D
stg
Parameter
CEO
Elektronische Bauelemente
Collector Current (DC)
Junction and
Collector Current (Pulse)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Power Dissipation
Pulse width
Storage Temperature
*V
*V
*V
*V
*BV
Symbol
BV
BV
CE
CE
*h
BE
*h
I
BE
I
C
ton
toff
EBO
CBO
fT
FE2
FE4
ob
CBO
CEO
(sat)1
(sat)2
EBO
(sat)
(on)
≦
300 s, Duty Cycle
A
µ
Parameter
=25 C
100
140
Min
80
70
60
80
40
o
-
-
5
C
-
-
-
-
-
-
-
o
RoHS Compliant Product
unless otherwise specified
Typ.
0.12
0.43
170
175
800
200
200
0.9
0.8
80
45
-
-
-
-
-
-
≦
2%
1.25
Max
100
300
0.3
0.6
30
1
-
-
-
-
-
-
-
-
-
REF.
Planar High Performance Transistor
C
D
A
B
E
F
MH
Uni
nA
ns
nA
pF
V
V
V
z
t
Min.
4.05
1.50
1.30
2.40
0.89
4.4
I
I
Millimeter
Test Conditions
I
I
I
V
I
I
V
V
V
V
V
V
V
V
C
C
C
C
E
C
C
CB
EB
CE
CE
=
=
CE
CE
CE
CB
CC
=100µA,I
=100
=10mA,I
=
=
1A,I
1A,V
1A,I
3A,I
= 60V,I
=4V,I
= V, I
= V, I
= V, I
= V, I
= V, I
=10 , f=1MHz
=
BCP156
Any changing of specification will not be informed individual
NPN Silicon
2
2
2
2
5
10V,I
Max.
4.25
1.70
1.50
2.60
1.20
B
µA,I
B
B
4.6
CE
=0.1A
V
=0.1A
=0.3A
-
C
55~+150
=2V
C
Value
B
C
=0
C
C
C
E
C
E
C
=0
=
1.2
=
=
=
=100m A,f=100MHz
80
60
=0
=0
=0
5
3
6
=500mA,I
50mA
500mA
1A
2 A
SOT-89
REF.
M
G
H
K
J
L
I
B1
Min.
0.40
1.40
0.35
3.00 REF.
1.50 REF.
Millimeter
0.70 REF.
5 q TYP.
=I
B2
=50mA
Units
Max.
W
O
0.52
1.60
0.41
V
V
V
A
C
Page 1 of 2
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BCP156 Summary of contents
Page 1
... Elektronische Bauelemente Description The BCP156 is designed for general purpose www.DataSheet4U.net switching and amplifier applications. Features * 3 Amp Continuous Current * 60 Volt V CEO * Low Saturation Voltage Absolute Maximum Ratings at T Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO Collector Current (DC Collector Current (Pulse) ...
Page 2
... Elektronische Bauelemente Characteristics Curve Collector Current (A) Collector Current (A) Collector Emitter Voltage (V) http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A BCP156 NPN Silicon Planar High Performance Transistor Collector Current (A) Collector Current (A) Collector Current (A) Any changing of specification will not be informed individual Page ...