BF722 Siemens Semiconductor Group, BF722 Datasheet - Page 2

• Manufacturer Part Number: BF722
• Description: NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
Collector-emitter cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
AC characteristics
Transition frequency
I
Collector-base capacitance
V
1)
Semiconductor Group
C
C
C
E
C
C
C
CB
CE
CE
EB
CB
= 10 A, I
= 1 mA, I
= 10 A, R
= 10 A, I
= 25 mA, V
= 30 mA, I
= 10 mA, V
Pulse test conditions: t 300 s, D = 2 %.
A
= 5 V, I
= 200 V, I
= 200 V, R
= 200 V, R
= 30 V, I
= 25 ˚C, unless otherwise specified.
C
B
B
C
C
BE
= 0
B
= 0
= 0
= 0
CE
CE
E
= 0, f = 1 MHz
BE
BE
= 5 mA
= 2.7 k
= 0
1)
= 20 V
= 10 V, f = 100 MHz
= 2.7 k
= 2.7 k , T
A
= 150 ˚C
BF 722
BF 720
BF 720
BF 722
1)
2
Symbol
V
V
V
V
I
I
I
h
V
C
f
T
CB0
CER
EB0
FE
(BR)CE0
(BR)CER
(BR)CB0
(BR)EB0
CEsat
obo
min.
250
300
300
250
5
–
–
–
–
50
–
–
–
Values
typ.
–
–
–
–
–
–
–
–
–
–
–
100
0.8
max.
–
–
–
–
–
10
50
10
10
–
0.6
–
–
BF 720
BF 722
Unit
V
nA
nA
–
V
MHz
pF
A
A