MJW18020 ON, MJW18020 Datasheet

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MJW18020

Manufacturer Part Number
MJW18020
Description
NPN Silicon Power Transistors High Voltage Planar
Manufacturer
ON
Datasheet

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Quantity
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Part Number:
MJW18020G
Manufacturer:
OMRON
Quantity:
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Part Number:
MJW18020G
Manufacturer:
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Quantity:
20 000
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
THERMAL CHARACTERISTICS
January, 2002 – Rev. 0
MAXIMUM RATINGS
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Power Dissipation @ T
Operating and Storage Junction
Thermal Resistance,
Thermal Resistance,
Maximum Lead Temperature for Soldering
The MJW18020 planar High Voltage Power Transistor is
Mains features include:
High and Excellent Gain Linearity
Fast and Very Tight Switching Times Parameters t
Very Stable Leakage Current due to the Planar Structure
High Reliability
Semiconductor Components Industries, LLC, 2002
Purposes: 1/8” from Case for 5 Seconds
Derate Above 25_C
Temperature Range
Junction–to–Case
Junction–to–Ambient
– Peak (Note 1.)
– Peak (Note 1.)
Characteristic
Rating
Preferred Devices
C
= 25_C
10%.
Symbol
Symbol
T
V
V
V
V
R
J
R
P
T
CEO
CBO
, T
CES
EBO
I
I
C
B
L
D
JC
JA
stg
si
and t
–65 to
Value
1000
1000
+150
Max
450
250
275
9.0
6.0
2.0
0.5
30
45
10
50
fi
1
Watts
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
_C
Preferred devices are recommended choices for future use
and best overall value.
MJW18020
Device
ORDERING INFORMATION
1
1000 VOLTS BV
450 VOLTS BV
1 BASE
MJW18020= Device Code
LL
Y
WW
MARKING DIAGRAM
2
http://onsemi.com
30 AMPERES
3
250 WATTS
2 COLLECTOR
Package
CASE 340K
TO–247
STYLE 3
TO–247
MJW
18020
LLYWW
= Location Code
= Year
= Work Week
Publication Order Number:
3 EMITTER
CEO
CES
30 Units/Rail
MJW180203/D
Shipping

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MJW18020 Summary of contents

Page 1

... Preferred Devices The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge configurations. Mains features include: High and Excellent Gain Linearity ...

Page 2

... C C Storage Time Fall Time Turn–Off Time SWITCHING CHARACTERISTICS: Inductive Load (V Fall Time (I C Storage Time Crossover Time Fall Time (I C Storage Time Crossover Time MJW18020 ( unless otherwise noted) C Symbol V CEO(sus) I CEO , CES (T = 125 EBO ...

Page 3

... – 1 125 C J 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT (A) C Figure 5. Typical Base–Emitter Saturation Voltage 5 MJW18020 TYPICAL CHARACTERISTICS 100 5 1.0 10 100 0.01 = 2.0 V Figure 2. DC Current Gain 100 10.0 1.0 0 0.0 10 100 0 ...

Page 4

... C ib 1000 C ob 100 COLLECTOR–EMITTER VOLTAGE (VOLTS) CE Figure 7. Typical Capacitance MJW18020 TYPICAL CHARACTERISTICS 100.00 DC 10.00 1.00 0.10 0.01 100 Figure 8. Forward Bias Safe Operating Area v 125 > 500 –1 200 400 ...

Page 5

... MJW18020 PACKAGE DIMENSIONS TO–247 CASE 340K–01 ISSUE C –Q– –B– –Y– http://onsemi.com –T– ...

Page 6

... Notes MJW18020 http://onsemi.com 6 ...

Page 7

... Notes MJW18020 http://onsemi.com 7 ...

Page 8

... N. American Technical Support: 800–282–9855 Toll Free USA/Canada MJW18020 JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJW18020/D ...

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