UNR111x Panasonic Semiconductor, UNR111x Datasheet - Page 10
UNR111x
Manufacturer Part Number
UNR111x
Description
Silicon PNP epitaxial planer transistor
Manufacturer
Panasonic Semiconductor
Datasheet
1.UNR111X.pdf
(14 pages)
www.DataSheet4U.com
UNR111x Series
10
Characteristics charts of UNR111D
Characteristics charts of UNR111E
−60
−50
−40
−30
−20
−10
−60
−50
−40
−30
−20
−10
− 0.1
6
5
4
3
2
1
0
0
0
0
0
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
I
B
= −1.0 mA
−2
−2
− 0.9 mA
I
B
− 0.8 mA − 0.7 mA
= − 1.0 mA
C
−1
− 0.9 mA
−4
−4
I
I
C
C
ob
− 0.4 mA
− 0.4 mA
− 0.8 mA
V
V
V
− 0.5 mA
−6
− 0.5 mA
−6
− 0.6 mA
− 0.6 mA
CE
CE
− 0.7 mA
CB
−10
−8
−8
f = 1 MHz
I
T
T
E
T
a
a
CB
a
= 0
− 0.3 mA
− 0.2 mA
= 25°C
− 0.1 mA
= 25˚C
= 25°C
− 0.2 mA
− 0.1 mA
−10
− 0.3 mA
−10
CE
CE
(V)
( V )
( V )
−100
−12
−12
− 0.01
−
−100
−
− 0.1
−
−10
−10
−10
−10
−10
−
0.01
100
0.1
−1
−
−1
10
− 0.1
− 0.1
1
−1.5
4
3
2
Collector current I
Collector current I
−2.0
−25°C
−25°C
SJH00001BED
Input voltage V
V
V
25°C
−1
−1
I
CE(sat)
CE(sat)
O
−2.5
25°C
V
I
I
−3.0
IN
−10
−10
T
IN
C
C
a
C
C
T
= 75°C
I
I
( mA )
( V )
C
a
( mA )
C
V
T
−3.5
= 75°C
/ I
/ I
a
O
= 25°C
B
= −5 V
B
= 10
= 10
−100
−100
−4.0
− 0.01
−100
− 0.1
−10
160
120
400
300
200
100
−1
80
40
− 0.1
0
0
−1
−1
Collector current I
Collector current I
Output current I
−10
−10
−1
V
h
h
FE
FE
IN
I
I
I
−100
C
C
−100
O
−10
O
T
C
C
V
T
a
V
V
T
( mA )
25°C
−25°C
25°C
−25°C
a
= 75°C
O
( mA )
CE
( mA )
CE
a
= 25°C
= 75°C
= − 0.2 V
= −10 V
= −10 V
−1 000
−1 000
−100