LMN200B01 Diodes Incorporated, LMN200B01 Datasheet - Page 6

• Manufacturer Part Number: LMN200B01
• Description: 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
• Manufacturer: Diodes Incorporated

DS30651 Rev. 7 - 2
1.8
1.6
2.2
1.4
1.2
0
4
3
2
1
2
0
1.4
1.8
1.6
1.2
1.0
0.8
0.6
0.4
0.2
-75
0.001
0
0
-50
Fig. 13 Static Drain-Source On-Resistance
V
Pulsed
T = 25°C
GS
T , JUNCTION TEMPERATURE (°C)
A
J
-25
1
V
Fig. 11 Gate Threshold Voltage
= 10V
V
DS
GS
vs. Junction Temperature
,
Fig. 9 Output Characteristics
= 8V
I , DRAIN CURRENT (A)
D
DRAIN-SOURCE VOLTAGE (V)
T = 125°C
0
0.01
A
2
vs. Drain Current
25
T = -55°C
T = 25°C
A
3
V
A
Typical N-Channel MOSFET (Q2) Characteristics
GS
50
T = 85°C
A
= 10V
V
GS
4
75 100 125 150
T = 150°C
= 4V
A
V
V
I = 0.25mA
Pulsed
0.1
D
V
DS
DS
GS
V
GS
= 10V
= V
= 3V
5
V
GS
= 5V
GS
= 6V
6
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1
7
6 of 10
1.4
1.2
0.8
0.6
0.4
0.2
0
1
5
4
6
3
2
0
7
1
5
4
3
2
0
0
1
0.001
0
I = 50mA
D
V
Fig. 12 Static Drain-Source On-Resistance
Fig. 14 Static Drain-Source On-Resistance
V
Pulsed
2
DS
GS
V
= 10V
V
GS
1
Fig. 10 Transfer Characteristics
GS,
= 5V
4
,
I = 115mA
D
GATE-SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
vs. Gate-Source Voltage
I
D
6
,
DRAIN CURRENT (A)
T = 125°C
0.01
vs. Drain Current
A
2
8
T = -55°C
A
10
T = 25°C
A
3
12
T =
T =
A
T = 150°C
A
A
T =
85°C
T = 85°C
0.1
14
A
125°C
A
T =
25°C
A
T = 25°C
Pulsed
4
T =
16
A
A
-55°C
LMN200B01
150°C
18
5
20
1