2MBI200U4B-120 FUJI, 2MBI200U4B-120 Datasheet - Page 8

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2MBI200U4B-120

Manufacturer Part Number
2MBI200U4B-120
Description
IGBT MODULE
Manufacturer
FUJI
Datasheet

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cate-
gorie
Test
s
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Pull test)
( for gate )
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code B
Condition code B
Condition code A
Condition code C
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 102
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
MS5F6032
norms
* under confirmation
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
failure
of
0
0
0
0
0
0
0
0
0
0
0
*
*
*
H04-004-03a
8
13

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