RBV1500D EIC discrete Semiconductors, RBV1500D Datasheet - Page 2

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RBV1500D

Manufacturer Part Number
RBV1500D
Description
SILICON BRIDGE RECTIFIERS
Manufacturer
EIC discrete Semiconductors
Datasheet
6
0.01
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
15
12
1.0
0.1
18
10
9
3
0
0.4
0
RATING AND CHARACTERISTIC CURVES ( RBV1500D - RBV1510D )
RECTIFIED CURRENT
PER DIODE
25
0.6
FORWARD VOLTAGE, VOLTS
CASE TEMPERATURE, ( C)
0.8
50
1.0
75
HEAT-SINK MOUNTING, Tc
(12.7cm x 12.7cm x 7.3cm)
Pulse Width = 300 s
100
1 % Duty Cycle
1.2
5" x 4" x 3" THK.
Al.-Finned plate
T
J
= 25 C
125
1.4
150
1.6
1.8
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
0.01
300
250
200
150
100
1.0
10
0.1
50
0
1
0
8.3 ms SINGLE HALF SINE WAVE
PERCENT OF RATED REVERSE
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PER DIODE
20
2
JEDEC METHOD
40
4
VOLTAGE, (%)
6
60
10
T
T
J
J
80
T
= 100 C
= 25 C
J
20
= 50 C
100
40
120
60
140
100

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