MT3S08T Toshiba Semiconductor, MT3S08T Datasheet
MT3S08T
Manufacturer Part Number
MT3S08T
Description
SILICON NPN EPITAXIAL PLANAR TYPE
Manufacturer
Toshiba Semiconductor
Datasheet
1.MT3S08T.pdf
(3 pages)
www.DataSheet4U.com
VHF~UHF Band Low Noise Amplifier Applications
·
·
Maximum Ratings
Marking
NF = 1.4dB
|S21e|
Sutable for use in an OSC
Low noise figure
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
2
= 10.5dB (@1 V/5 mA/1 GHz)
Characteristics
1
T H
3
2
(Ta = = = = 25°C)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Symbol
V
V
V
Tstg
P
CBO
CEO
EBO
I
I
Tj
C
MT3S08T
B
C
-55~125
Rating
100
125
1.5
20
40
10
8
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight:
JEDEC
JEITA
TOSHIBA
g (typ.)
2-1B1A
MT3S08T
2002-01-23
―
―
Unit: mm
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MT3S08T Summary of contents
Page 1
... TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T ( 25°C) Symbol Rating V 20 CBO V 8 CEO V 1.5 EBO 100 C Tj 125 Tstg -55~125 2 1 MT3S08T Unit °C JEDEC ― °C JEITA ― TOSHIBA 2-1B1A Weight: g (typ.) 2002-01-23 Unit: mm ...
Page 2
... CBO EBO MHz MT3S08T Min Typ. Max Unit ¾ 2 4.5 GHz ¾ ¾ 10.5 dB ¾ 10.5 13.5 ¾ 1.4 2.5 dB Min Typ. Max Unit ¾ ¾ mA 0.1 ¾ ¾ ...
Page 3
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 MT3S08T 000707EAA 2002-01-23 ...