DCR1008SF Dynex Semiconductor, DCR1008SF Datasheet - Page 4

• Manufacturer Part Number: DCR1008SF
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1008SF
DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/8
Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
I
I
t
FGM
GT
FGN
gd
/I
GM
T
L
H
q
GT
GD
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Turn-off time
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 67% V
Gate source1.5A
t
At T
At T
V
Rise time 0.5 s, T
T
T
I
V
V
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table. fig. 4
r
T
D
j
j
RM
DR
DRM
DRM
= 3000A, t
= 25
= 25
0.5 s. T
= 67% V
vj
vj
= 2800V, dV
RRM
= 900V, dI
DRM
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, R
T
DRM
case
DRM
j
= 125
o
o
DRM
D
g-k
C
C
, T
DRM
p
case
= 125
T
case
= 5V
j
= 1ms, T
= 125
=
RR
, Gate source 30V, 15
case
, I
= 25
= 25
Conditions
/dt = 5A/ s,
o
DR
Conditions
C.
T
o
j
= 125
/dt = 20V/ s linear
= 1500A,
C
= 25
o
o
C.
o
C
C
j
o
= 125˚C,
o
C
C
Repetitive 50Hz
Non-repetitive
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Typ.
230
350
-
-
-
-
-
-
-
-
Max.
1000
Max.
0.57
0.25
0.25
200
900
600
150
500
200
150
2.0
1.1
3.5
75
30
30
10
5
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
A
V
V
s
s