DCR1277SD32 Dynex Semiconductor, DCR1277SD32 Datasheet - Page 3

• Manufacturer Part Number: DCR1277SD32
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Symbol
I
RRM
dV/dt
V
P
V
dI/dt
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
t
I
I
FGM
FGN
gd
GT
/I
GM
q
L
GD
T
H
GT
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 67% V
Gate source 10V, 5
t
At T
At T
V
t
I
V
V
T
T
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, fig.4
r
r
T
j
j
DRM
D
R
DR
DRM
= 0.5 s, T
= 2000A, t
= 25
= 25
0.5 s, T
= 67% V
= 50V, dI
= 67% V
vj
vj
RRM
DRM
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, R
T
DRM
case
DRM
j
o
o
= 125
DRM
j
D
g-k
C
C
RR
, T
case
= 125
DRM
p
T
DRM
case
= 25
= 5V
j
= 1ms, T
/dt = 5A/ s,
= 125
=
, Gate source 30V, 15
case
, dV
= 25
= 25
Conditions
to 1000A
o
o
C
C
o
= 125
C
DR
o
C.
o
o
Conditions
C
C
/dt = 20V/ s linear
j
= 125˚C,
o
C
Repetitive 50Hz
Non-repetitive
Typ.
200
500
700
-
-
-
-
-
-
-
DCR1277SD
1000
Max.
Max.
0.45
0.95
500
0.25
0.25
100
150
650
150
300
400
150
2.5
4.0
30
10
5
5
Units
Units
V/ s
A/ s
A/ s
m
mA
mA
mA
mA
W
W
V
V
V
V
A
V
V
s
s
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