DCR803SG15 Dynex Semiconductor, DCR803SG15 Datasheet - Page 6

• Manufacturer Part Number: DCR803SG15
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR803SG
6/8
10000
0.001
1000
0.01
Fig.6 Maximum (limit) transient thermal impedance -
100
0.1
0.001
0.1
dI/dt
Rate of decay of on-state current, dI/dt - (A/µs)
I
T
0.01
Fig.4 Stored charge
I
RR
junction to case
Q
1.0
S
Time - (s)
3 phase 120˚
6 phase 60˚
Conditions:
Q
T
Conduction
Halfwave
j
0.1
S
= 125˚C
d.c.
is total integral stored charge
Double side
Effective thermal resistance
10
Junction to case ˚C/W
0.032
0.034
0.044
0.057
Double side cooled
Anode side cooled
1.0
I
I
Min. value
I
I
Max. value
T
T
T
T
= 1250A
= 500A
= 1250A
= 500A
Anode side
0.064
0.066
0.076
0.089
100
10
Fig.7 Surge (non-repetitive) on-state current vs time (with
25
10
20
15
V
100
0.1
5
0
10
GD
0.001
1
1
Pulse width
10ms
1ms
100
200
500
µs
I
2
ms
t
Frequency Hz
150
150
150
150
50
20
0.01
Fig.5 Gate characteristics
100
150
150
150
100
50% V
-
Gate trigger current, I
10
400
150
125
100
25
-
Table gives pulse power P
RRM
1
Duration
at T
0.1
2 3 4 5
Cycles at 50Hz
case
www.dynexsemi.com
125˚C)
GT
- (A)
certain triggering
10
1
Region of
I
GM
2
20 30
t = Î
in Watts
2
2
x t
50
600
500
400
I
FGM
10