LV2209MMBV2109LT1 ON Semiconductor, LV2209MMBV2109LT1 Datasheet - Page 4

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LV2209MMBV2109LT1

Manufacturer Part Number
LV2209MMBV2109LT1
Description
Silicon Tuning Diodes
Manufacturer
ON Semiconductor
Datasheet
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T J(max) , the maximum rated junction temperature
of the die, R JA , the thermal resistance from the device
junction to ambient, and the operating temperature, T A .
Using the values provided on the data sheet for the SOT–23
package, P D can be calculated as follows:
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T A of 25 C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
Surface mount board layout is a critical portion of the
The power dissipation of the SOT–23 is a function of the
The values for the equation are found in the maximum
The 556 C/W for the SOT–23 package assumes the use
P D =
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
150 C – 25 C
P D =
556 C/W
T J(max) – T A
R JA
= 225 milliwatts
SOT–23 POWER DISSIPATION
http://onsemi.com
SOT–23
4
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
The melting temperature of solder is higher than the
soldering should be 100 C or less.*
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10 C.
260 C for more than 10 seconds.
maximum temperature gradient shall be 5 C or less.
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
during cooling.
Always preheat the device.
The delta temperature between the preheat and
When preheating and soldering, the temperature of the
The soldering temperature and time shall not exceed
When shifting from preheating to soldering, the
After soldering has been completed, the device should
Mechanical stress or shock should not be applied
SOLDERING PRECAUTIONS

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