LV2327E40R Philips Semiconductors, LV2327E40R Datasheet - Page 3

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LV2327E40R

Manufacturer Part Number
LV2327E40R
Description
NPN microwave power transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. At 0.3 mm from the case.
1997 Feb 18
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CEO
CER
EBO
tot
NPN microwave power transistor
SYMBOL
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
soldering temperature
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
PARAMETER
open emitter
open base
R
open collector
T
t
3
mb
BE
10 s; note 1
= 47
75 C
CONDITIONS
65
MIN.
LV2327E40R
Product specification
40
15
20
3
2
18
+200
200
235
MAX.
V
V
V
V
A
W
C
C
C
UNIT

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