MX26LV004T Macronix, MX26LV004T Datasheet - Page 38

• Manufacturer Part Number: MX26LV004T
• Description: (MX26LV004T/B) 4M-Bit CMOS Single Voltage Flash Memory
• Manufacturer: Macronix

Note:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions : 25 C, 3.3V VCC. Programming spec. assume
3. Maximum values are measured at VCC=3.0V, worst case temperature. Maximum values are up to including 2K
4. System-level overhead is the time required to execute the command sequences for the all program command.
5. Excludes 00H programming prior to erasure. (In the pre-programming step of the embedded erase algorithm, all bits
6. Min. erase/program cycles is under : 3.3V VCC, 25 C, checkerboard pattern conditions, and without baking process.
P/N:PM1099
LATCH-UP CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE(1)
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
Erase/Program Cycles
Input Voltage with respect to GND on ACC, OE, RESET, A9
Input Voltage with respect to GND on all power pins, Address pins, CE and WE
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
that all bits are programmed to checkerboard pattern.
program/erase cycles.
are programmed to 00H before erasure)
38
2K (6)
MIN.
MX26LV004T/B
TYP.(2)
LIMITS
2.4
20
55
18
MAX.(3)
-100mA
220
-1.0V
-1.0V
-1.0V
15
80
36
MIN.
REV. 0.02, JUL. 12, 2004
Cycles
UNITS
VCC + 1.0V
VCC + 1.0V
sec
sec
sec
+100mA
us
MAX.
12V