MX28F2000P Macronix International, MX28F2000P Datasheet - Page 14

• Manufacturer Part Number: MX28F2000P
• Description: 2M-BIT [256K x 8] CMOS FLASH MEMORY
• Manufacturer: Macronix International

AC CHARACTERISTICS
NOTES:
1. CE and OE must be fixed high during VPP transition from 5V
2. Refer to read operation when VPP=VCC about read opera-
3. tDF defined as the time at which the output achieves the open
P/N: PM0380
to 12V or from 12V to 5V.
tion while VPP 12V.
circuit condition and data is no longer driven.
SYMBOL PARAMETER
tVPS
tOES
tCWC
tCEP
tCEPH1
tCEPH2
tAS
tAH
tAH1
tDS
tDH
tCESP
tCES
tCESC
tCESV
tVPH
tDF
tDPA
tAETC
tAETB
tAVT
tBALC
tBAL
tCH
tCS
Total erase time in auto block erase
VPP setup time
OE setup time
Command programming cycle
WE programming pulse width
WE programming pluse width High
WE programming pluse width High
Address setup time
Address hold time
Address hold time for DATA POLLING
Data setup time
Data hold time
CE setup time before DATA polling/toggle bit
CE setup time
CE setup time before command write
CE setup time before verify
VPP hold time
Output disable time (Note 3)
DATA polling/toggle bit access time
Total erase time in auto chip erase
Total programming time in auto verify
Block address load cycle
Block address load time
CE Hold Time
CE setup to WE going low
TA = 0
o
C to 70
o
C, VCC = 5V ± 10%, VPP =12V ± 5%
0.3
MIN.
100
100
70
45
20
100
0
45
0
45
10
100
0
100
6
100
70
5(TYP.)
15
100
0
0
5(TYP.)
28F2000P-70
14
MAX.
20
300
30
0.3
28F2000P-90
MIN.
100
100
90
45
20
100
0
45
0
45
10
100
0
100
6
100
5(TYP.)
15
100
0
0
5(TYP.)
MAX.
20
90
300
30
MX28F2000P
50
50
50
6
5(TYP.)
0.3
MIN.
100
100
120
20
100
0
0
10
100
0
100
100
5(TYP.)
15
100
0
0
28F2000P-12
MAX.
30
120
300
30
UNIT CONTIONS
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
s
us
us
us
ns
ns
ns
ns
ns
ns
ns
ns
s
REV. 1.5, OCT 29, 1998