MX29LA129ML Macronix International, MX29LA129ML Datasheet - Page 32

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MX29LA129ML

Manufacturer Part Number
MX29LA129ML
Description
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
Manufacturer
Macronix International
Datasheet
MX29LA129M H/L
Toggle Bit. If Q3 is low ("0"), the device will accept addi-
tional sector erase commands. To insure the command
has been accepted, the system software should check
the status of Q3 prior to and following each subsequent
sector erase command. If Q3 were high on the second
status check, the command may not have been accepted.
If the time between additional erase commands from the
system can be less than 50us, the system need not to
monitor Q3.
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Q1: Write-to-Buffer Abort
Q1 indicates whether a Write-to-Buffer operation was
aborted. Under these conditions Q1 produces a "1". The
system must issue the Write-to-Buffer-Abort-Reset com-
mand sequence to return the device to reading array data.
See Write Buffer section for more details.
RY/BY#:READY/BUSY OUTPUT
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in progress
or complete. The RY/BY# status is valid after the rising
edge of the final WE# pulse in the command sequence.
Since RY/BY# is an open-drain output, several RY/BY#
pins can be tied together in parallel with a pull-up resistor
to VCC .
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device
is ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.
P/N:PM1171
REV. 1.0, FEB. 27, 2006
32

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