MX29LV033 Macronix, MX29LV033 Datasheet

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MX29LV033

Manufacturer Part Number
MX29LV033
Description
32M-Bit CMOS Flash Memory
Manufacturer
Macronix
Datasheet

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FEATURES
GENERAL FEATURES
• 4,194,304 x 8 byte structure
• Sixty-four Equal Sectors with 64KB each
• Eighteen Sector Groups
• Single Power Supply Operation
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.4V
• Compatible with JEDEC standard
PERFORMANCE
• High Performance
• Low Power Consumption
GENERAL DESCRIPTION
The MX29LV033 is a 32-mega bit Flash memory orga-
nized as 4M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV033 is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV033 offers access time as fast as
70ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29LV033 has separate chip enable (CE) and output
enable (OE) controls.
P/N:PM0679
- Any combination of sectors can be erased with erase
suspend/resume function
- Provides sector group protect function to prevent pro-
gram or erase operation in the protected sector group
- Provides chip unprotected function to allow code
changing
- Provides temporary sector group unprotected func-
tion for code changing in previously protected sector
groups
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
- Pinout and software compatible to single power sup-
ply Flash
- Fast access time: 70/90/120ns
- Fast program time: 7us/byte, 36s/chip (typical)
- Fast erase time: 0.7s/sector, 45s/chip (typical)
- Low active read current: 10mA (typical) at 5MHz
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
1
• Minimum 100,000 erase/program cycle
• 10-year data retention
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
• Status Reply
• Unlock bypass program command
HARDWARE FEATURES
• Ready/Busy (RY/BY) Output
• Hardware Reset (RESET) Input
• ACC input pin
PACKAGE
• 40-pin TSOP
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV033 uses a command register to manage this
functionality.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
- Low standby current: 200nA (typical)
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
- Provide faster program time while issuing multiple
program command sequence
- Provides a hardware method of detecting program
and erase operation completion
- Provides a hardware method to reset the internal state
machine to read mode
- Provides accelerated program capability
MX29LV033
REV. 1.2, OCT. 06, 2003

Related parts for MX29LV033

MX29LV033 Summary of contents

Page 1

... Low Power Consumption - Low active read current: 10mA (typical) at 5MHz GENERAL DESCRIPTION The MX29LV033 is a 32-mega bit Flash memory orga- nized as 4M bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The MX29LV033 is packaged in 40-pin TSOP ...

Page 2

... The MX29LV033 uses a 2.7V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V ...

Page 3

... Write Enable Input OE Output Enable Input RESET Hardware Reset Pin, Active Low RY/BY Read/Busy Output VCC +3.3V single power supply ACC Hardware Acceleration Pin VSS Device Ground NC Pin Not Connected Internally P/N:PM0679 MX29LV033 LOGIC SYMBOL 22 A17 40 VSS 39 A0-A21 A20 38 A19 37 A10 ...

Page 4

... BLOCK DIAGRAM CONTROL CE INPUT OE LOGIC WE ADDRESS LATCH A0-A21 AND BUFFER Q0-Q7 P/N:PM0679 MX29LV033 PROGRAM/ERASE HIGH VOLTAGE MX29LV033 FLASH ARRAY ARRAY SOURCE HV Y-PASS GATE PGM SENSE DATA AMPLIFIER HV PROGRAM DATA LATCH I/O BUFFER 4 WRITE STATE MACHINE (WSM) STATE REGISTER COMMAND DATA DECODER COMMAND DATA LATCH ...

Page 5

... MX29LV033 REV. 1.2, OCT. 06, 2003 ...

Page 6

... MX29LV033 REV. 1.2, OCT. 06, 2003 ...

Page 7

... ID ,V =12.0±0.5V,X=Don't Care, A =Address IN MX29LV033 Address Q0~ OUT High-Z X High-Z X High-Z Sector Addresses OUT A6=L, A1=H, A0=L Sector Addresses OUT A6=H, A1=H, A0 =Data IN, D ...

Page 8

... HH accelerated programming, or device damage may result. STANDBY MODE MX29LV033 can be set into Standby mode with two dif- ferent approaches. One is using both CE and RESET pins and the other one is using RESET pin only. When using both pins of CE and RESET, a CMOS Standby mode is achieved with both pins held at Vcc ± ...

Page 9

... OE input. MX29LV033 is capable to provide the Automatic Standby Mode to restrain power consumption during read-out of data. This mode can be used effectively with an applica- tion requested low power consumption such as handy terminals. To active this mode, MX29LV033 automatically switch themselves to low power mode when MX29LV033 ad- dresses remain stable during access time of tACC+30ns ...

Page 10

... MX29LV033 device code of A3H. VERIFY SECTOR GROUP PROTECT STATUS OPERATION MX29LV033 provides hardware method for sector group protect status verify. Which method requires VID on A9 pin, VIH on WE and A1 pins, VIL on CE, OE, A6, and A0 pins, and sector address on A16 to A21 pins. Which the identified sector is protected, the device will output 01H ...

Page 11

... Writing is inhibited by holding any one VIL VIH VIH. To initiate a write cycle CE and WE must be a logical zero while logical one. POWER-UP SEQUENCE The MX29LV033 powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command se- quences. ...

Page 12

... Table 2 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Either of the two TABLE 2. MX29LV033 COMMAND DEFINITIONS First Bus Command Bus ...

Page 13

... The reset command may be written between the sequence cycles in an erase command sequence before P/N:PM0679 MX29LV033 erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. ...

Page 14

... However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" "1". P/N:PM0679 MX29LV033 UNLOCK BYPASS COMMAND SEQUENCE The unlock bypass feature allows the system to pro- gram bytes to the device faster than using the standard program command sequence ...

Page 15

... See the Erase/Program Operations tables in "AC Char- acteristics" for parameters, and to Figure 16 for timing diagrams. P/N:PM0679 The MX29LV033 contains a Silicon-ID-Read operation to supplement traditional PROM programming method- ology. The operation is initiated by writing the read sili- con ID command sequence into the command register. ...

Page 16

... Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all P/N:PM0679 MX29LV033 other conditions. Another Erase Suspend command can be written after the chip has resumed erasing. 16 ...

Page 17

... These three bits are discussed first. Q7 Note1 Q7 0 Erase Suspend Read 1 (Erase Suspended Sector) Erase Suspend Read Data (Non-Erase Suspended Sector) Erase Suspend Program MX29LV033 RY/BY Note2 Toggle 0 N Toggle Toggle 0 1 Toggle 0 No ...

Page 18

... Erase Suspend mode. Toggle Bit I may be read at any address, and is valid P/N:PM0679 MX29LV033 after the rising edge of the final WE or CE, whichever happens first pulse in the command sequence (prior to the program or erase operation), and during the sector time-out ...

Page 19

... Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not suc- cessfully completed. Data Polling and Toggle Bit are the P/N:PM0679 MX29LV033 only operating functions of the device under this condi- tion. If this time-out condition occurs during sector erase op- eration, it specifies that a particular sector is bad and it may not be reused ...

Page 20

... If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode the standby mode. P/N:PM0679 MX29LV033 20 REV. 1.2, OCT. 06, 2003 ...

Page 21

... Ambient Temperature (T Industrial (I) Devices Ambient Temperature ( +125 C V Supply Voltages CC V for full voltage range +2 3 Operating ranges define those limits between which the functionality of the device is guaranteed. 21 MX29LV033 ). . . . . . . . . . . . 0°C to +70° -40° +85°C A REV. 1.2, OCT. 06, 2003 ...

Page 22

... VCC = 3.0 V ± 10% 8.5 VCC = 3.3 V 11.5 IOL=4.0mA, VCC=VCC min IOH=-2.0mA, 0.85Vcc VCC=VCC min IOH=-100uA, Vcc-0.4 VCC = VCC min 1.4 22 MX29LV033 TA=-40° ° ° ° ° 85° ° ° ° ° C Max Min Typ Max Unit ±1.0 ±1 ±1.0 ±1 ...

Page 23

... Input timing measurement OR EQUIVALENT reference levels Output timing measurement reference levels OUTPUTS Steady Changing from Changing from Changing, State Unknown Center Line is High Impedance State(High Z) Measurement Level 1.5V INPUT 23 MX29LV033 70 90, 120 Unit 1 TTL gate 30 100 5 0.0-3.0 1.5 1.5 1.5V OUTPUT REV. 1.2, OCT. 06, 2003 ...

Page 24

... MAX MAX MAX MIN MIN MIN MIN MIN MIN MIN MIN MIN MIN MIN Toggle & MIN Data Polling MIN MIN MIN MIN MIN MIN MAX 24 MX29LV033 70 90 120 Unit 70 90 120 120 ...

Page 25

... Fig 1. COMMAND WRITE OPERATION VCC 5V VIH Addresses VIL tAS VIH WE VIL tOES CE VIH VIL tCS OE VIH VIL VIH Data VIL P/N:PM0679 ADD Valid tAH tWP tCWC tCH tDS tDH DIN 25 MX29LV033 tWPH REV. 1.2, OCT. 06, 2003 ...

Page 26

... READ/RESET OPERATION Fig 2. READ TIMING WAVEFORMS VIH Addresses VIL VIH CE VIL VIH WE VIL VIH OE VIL HIGH Z VOH Outputs VOL P/N:PM0679 tRC ADD Valid tCE tOEH tOE tACC DATA Valid 26 MX29LV033 tDF tOH HIGH Z REV. 1.2, OCT. 06, 2003 ...

Page 27

... Fig 3. RESET TIMING WAVEFORM RY/BY CE, OE RESET Reset Timing NOT during Automatic Algorithms RY/BY CE RESET Reset Timing during Automatic Algorithms P/N:PM0679 Test Setup tRH tRP2 tReady2 tReady1 tRP1 27 MX29LV033 All Speed Options Unit MAX 20 us MAX 500 ns MIN 10 us MIN 500 ns MIN 70 ns MIN ...

Page 28

... Data RY/BY tVCS VCC NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status"). P/N:PM0679 Read Status Data tAS SA XXXh for chip erase tAH tCH tWHWH2 tWPH 55h 10h tBUSY 28 MX29LV033 Progress Complete tRB REV. 1.2, OCT. 06, 2003 ...

Page 29

... Fig 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART P/N:PM0679 START Write Data AAH Write Data 55H Write Data 80H Write Data AAH Write Data 55H Write Data 10H Data Poll from system YES No DATA = FFh ? YES Auto Erase Completed 29 MX29LV033 REV. 1.2, OCT. 06, 2003 ...

Page 30

... NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status"). P/N:PM0679 tAS Sector Sector Sector Address 0 Address 1 Address n tAH tBAL tWPH 30h 30h 30h tBUSY 30 MX29LV033 Read Status Data VA VA tWHWH2 In Progress Complete tRB REV. 1.2, OCT. 06, 2003 ...

Page 31

... Fig 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART Write Data 30H Sector Address Auto Sector Erase Completed P/N:PM0679 START Write Data AAH Write Data 55H Write Data 80H Write Data AAH Write Data 55H NO Last Sector to Erase ? YES Data Poll from System NO Data=FFh? YES 31 MX29LV033 REV. 1.2, OCT. 06, 2003 ...

Page 32

... Fig 8. ERASE SUSPEND/RESUME FLOWCHART P/N:PM0679 START Write Data B0H ERASE SUSPEND NO Toggle Bit checking Q6 not toggled YES Read Array or Program Reading or NO Programming End YES Write Data 30H ERASE RESUME Continue Erase Another NO Erase Suspend ? YES 32 MX29LV033 REV. 1.2, OCT. 06, 2003 ...

Page 33

... Address, PD=Program Data, DOUT is the true data the program address Fig 10. Accelerated Program Timing Diagram (8.5V ~ 9.5V) VHH ACC VIL or VIH tVHH P/N:PM0679 Read Status Data (last two cycle) tAS PA tAH tCH tWHWH1 tWP tWPH tDS tDH A0h PD tBUSY 33 MX29LV033 PA PA Status DOUT tRB VIL or VIH tVHH REV. 1.2, OCT. 06, 2003 ...

Page 34

... P/N:PM0679 PA for program SA for sector erase XXX for chip erase Data Polling tAS tAH tWHWH1 or 2 tCPH tBUSY tDH A0 for program PD for program 30 for sector erase 55 for erase 10 for chip erase 34 MX29LV033 PA DOUT Q7 REV. 1.2, OCT. 06, 2003 ...

Page 35

... Fig 12. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART Increment Address P/N:PM0679 MX29LV033 START Write Data AAH Write Data 55H Write Data A0H Write Program Data/Address Data Poll from system No Verify Word Ok ? YES No Last Address ? YES Auto Program Completed 35 REV. 1.2, OCT. 06, 2003 ...

Page 36

... If TA range during -40° 85° C, the time out timing is 18ms. 2. For sector group protect A6=0, A1=1, A0=0 ; for chip unprotect A6=1, A1=1, A0=0 P/N:PM0679 Valid (note 2) Valid (note 2) Verify 60h 40h Sector Group Protect: 150us Chip Unprotect: Time out timing (note 1) 36 MX29LV033 Valid (note 2) Status REV. 1.2, OCT. 06, 2003 ...

Page 37

... Fig 14. SECTOR GROUP PROTECT TIMING WAVEFORM (A9, OE Control 12V 3V A9 tVLHT 12V 3V OE tVLHT WE CE Data A21-A16 P/N:PM0679 tWPP 1 tOESP Sector Address 37 MX29LV033 Verify tVLHT 01H F0H tOE REV. 1.2, OCT. 06, 2003 ...

Page 38

... Set Up Sector Addr PLSCNT=1 OE=VID,A9=VID,CE=VIL A6=VIL Activate WE Pulse Time Out 150us Set WE=VIH, CE=OE=VIL A9 should remain VID Read from Sector Addr=SA, A1=1 No Data=01H? Yes Protect Another Sector? Remove VID from A9 Write Reset Command Sector Protection Complete 38 MX29LV033 . REV. 1.2, OCT. 06, 2003 ...

Page 39

... Fig 16. CHIP UNPROTECTED TIMING WAVEFORM(A9, OE Control) A1 12V 3V A9 tVLHT A6 12V 3V OE tVLHT WE CE Data P/N:PM0679 tWPP 2 tOESP 39 MX29LV033 Verify tVLHT 00H F0H tOE REV. 1.2, OCT. 06, 2003 ...

Page 40

... Time Out Timing (note 1) Set OE=CE=VIL A9=VID,A1=1 Set Up First Sector Addr Read Data from Device No Data=00H? Yes No All sectors have been verified? Yes Remove VID from A9 Write Reset Command Chip Unprotect Complete 40 MX29LV033 Increment PLSCNT No PLSCNT=1000? Yes Device Failed REV. 1.2, OCT. 06, 2003 ...

Page 41

... Yes Reset PLSCNT=1 Increment PLSCNT Yes No Yes PLSCNT=1000? No Yes Device failed Sector Unprotect Algorithm 41 MX29LV033 START PLSCNT=1 RESET=VID Wait 1us First Write No Temporary Sector Unprotect Mode Cycle=60h? Yes No All sectors protected? Yes Set up first sector address ...

Page 42

... Fig 19. TEMPORARY SECTOR GROUP UNPROTECTED WAVEFORMS 12V RESET tVIDR CE WE RY/BY P/N:PM0679 Program or Erase Command Sequence tRSP 42 MX29LV033 VIL or VIH tVIDR REV. 1.2, OCT. 06, 2003 ...

Page 43

... Fig 20. TEMPORARY SECTOR GROUP UNPROTECTED FLOWCHART Temporary Sector Unprotect Completed(Note 2) Note : 1. All protected sectors are temporary unprotected. P/N:PM0679 Start RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH VID=11.5V~12.5V 2. All previously protected sectors are protected again. 43 MX29LV033 REV. 1.2, OCT. 06, 2003 ...

Page 44

... Fig 21. SILICON ID READ TIMING WAVEFORM VCC 5V VID ADD VIH A9 VIL VIH ADD A0 VIL tACC A1 VIH VIL VIH ADD VIL CE VIH VIL VIH WE VIL VIH OE VIL VIH DATA VIL Q0-Q7 P/N:PM0679 tACC tCE tOE tOH DATA OUT C2H 44 MX29LV033 tDF tOH DATA OUT A3H REV. 1.2, OCT. 06, 2003 ...

Page 45

... VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data raed cycle. P/N:PM0679 VA tDF tOH Status Data Complement True Status Data Status Data True 45 MX29LV033 VA High Z Valid Data High Z Valid Data REV. 1.2, OCT. 06, 2003 ...

Page 46

... Fig 23. DATA POLLING ALGORITHM No Notes: 1.VA=valid address for programming. 2.Q7 should be rechecked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM0679 MX29LV033 START Read Q7~Q0 Add (1) Yes Q7 = Data ? Yes Read Q7~Q0 Add Yes Q7 = Data ? (2) No PASS FAIL 46 REV. 1.2, OCT. 06, 2003 ...

Page 47

... VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and array data read cycle. P/N:PM0679 VA tOE tDF tOH Valid Status Valid Status (second read) (first read) 47 MX29LV033 VA VA Valid Data Valid Data (stops toggling) REV. 1.2, OCT. 06, 2003 ...

Page 48

... Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 changes to "1". P/N:PM0679 START Read Q7~Q0 Read Q7~Q0 (Note 1) NO Toggle Bit Q6 =Toggle? YES Q5=1? YES (Note 1,2) Read Q7~Q0 Twice Toggle Bit Q6= Toggle? YES Program/Erase Operation Not Program/Erase Operation Complete 48 MX29LV033 REV. 1.2, OCT. 06, 2003 ...

Page 49

... Fig 26. Q6 versus Q2 Enter Embedded Erase Erasing Suspend Erase NOTES: The system can use toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended P/N:PM0679 MX29LV033 Enter Erase Erase Suspend Program Resume Erase Erase Suspend Suspend Read Program 49 Erase ...

Page 50

... Parameter Symbol Parameter Description CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes: 1. Sampled, not 100% tested. 2. Test conditions TA=25° C, f=1.0MHz DATA RETENTION Parameter Minimum Pattern Data Retention Time P/N:PM0679 MX29LV033 LIMITS MIN. TYP.(2) MAX. 0 210 36 108 100,000 MIN. -1.0V -1 ...

Page 51

... ORDERING INFORMATION PLASTIC PACKAGE PART NO. ACCESS TIME MX29LV033TC-70 70 MX29LV033TC-90 90 MX29LV033TC-12 120 MX29LV033TI-70 70 MX29LV033TI-90 90 MX29LV033TI-12 120 P/N:PM0679 OPERATING CURRENT STANDBY CURRENT (ns) MAX.(mA MX29LV033 PACKAGE MAX. (uA Pin TSOP (Normal Type Pin TSOP (Normal Type Pin TSOP ...

Page 52

... PACKAGE INFORMATION P/N:PM0679 MX29LV033 52 REV. 1.2, OCT. 06, 2003 ...

Page 53

... To modify ILIT parameter value from 35uA to 45uA during TA=-40°C to 85° Characteristics 2. To modify the chip unprotection time out timing during TA=-40°C to 85° C range from 15ms to 18ms 1.2 1. Corrected manufacturer ID code in command definitions table P/N:PM0679 MX29LV033 Page P1 P51 P24,28 P22 P22 ...

Page 54

... TEL:+65-348-8385 FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 ACRONIX MERICA, NC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com C L O., TD. MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. MX29LV033 ...

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