spp80p06ph Infineon Technologies Corporation, spp80p06ph Datasheet
spp80p06ph
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spp80p06ph Summary of contents
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SIPMOS Power-Transistor Features • P-Channel P-Channel · • Enhancement mode · Enhancement mode • Avalanche rated Avalanche rated · • dv/dt rated rated • 175°C operating temperature · • Pb-free lead plating; RoHs compliant 175°C operating ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...
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Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge Gate to drain charge Gate charge total V = ...
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Power dissipation tot C SPP80P06P 360 W 280 240 200 160 120 100 120 140 160 Safe operating area ...
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Typ. output characteristic =25° parameter µs p SPP80P06P -190 P = 340.00W tot -160 -140 -120 -100 -80 -60 -40 - ...
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Drain-source on-state resistance DS(on) j parameter : SPP80P06P 0.070 W 0.060 0.055 0.050 0.045 0.040 0.035 98% 0.030 typ 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 ...
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Avalanche energy para - - 850 mJ 700 600 500 400 300 200 100 105 Drain-source breakdown ...
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PG-TO220-3 Rev 1.5 Page 9 SPP80P06P H 2011-09-01 ...
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PG-TO263-3 Rev 1.5 Page 10 SPP80P06P H 2011-09-01 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...