ipp028n08n3g Infineon Technologies Corporation, ipp028n08n3g Datasheet

Page 1

OptiMOS ® 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

Page 4

Power dissipation P =f(T ) tot C 350 300 250 200 150 100 Safe operating area I =f =25 ° parameter limited ...

Page 5

Typ. output characteristics I =f =25 ° parameter 400 350 300 5.5 V 250 200 150 5 V 100 4 ...

Page 6

Drain-source on-state resistance R =f =100 A; V DS(on -60 - Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 1000 100 Drain-source breakdown voltage V =f BR(DSS -60 ...

Page 8

PG-TO262-3 (I²-Pak) Rev. 1.0 IPP028N08N3 G IPI028N08N3 G page 8 2008-01-25 ...

Page 9

PG-TO220-3 Rev. 1.0 IPP028N08N3 G IPI028N08N3 G page 9 2008-01-25 ...

Page 10

Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...