ipp032n06n3g Infineon Technologies Corporation, ipp032n06n3g Datasheet - Page 5

• Manufacturer Part Number: ipp032n06n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
480
400
320
240
160
400
350
300
250
200
150
100
80
50
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
10 V
1
D
2
|R
7 V
DS(on)max
4.5 V
6 V
5.5 V
5 V
2
V
V
GS
DS
175 °C
[V]
[V]
4
3
25 °C
4
6
page 5
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
280
240
200
160
120
80
40
D
=f(I
8
6
4
2
0
0
); T
0
0
D
j
); T
=25 °C
5 V
GS
IPB029N06N3 G
80
50
j
=25 °C
5.5 V
160
100
I
I
6 V
D
D
240
150
[A]
[A]
IPP032N06N3 G
320
200
IPI032N06N3 G
400
250
7 V
10 V
2008-12-11
480
300