psmg10005 Power Semiconductors, Inc., psmg10005 Datasheet
psmg10005
Manufacturer Part Number
psmg10005
Description
Power Mosfet
Manufacturer
Power Semiconductors, Inc.
Datasheet
1.PSMG10005.pdf
(2 pages)
Power MOSFET
in ECO-PAC 2
Single MOSFET Die
Preliminary Data Sheet
MOSFET
Symbol
V
V
V
V
I
I
E
E
dv/dt
P
Symbol
V
V
I
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
D25
D80
GSS
DSS
d(on)
d(off)
f
r
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
fs
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
iss
oss
rss
g(on)
gd
thJC
thCK
gs
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Test Conditions
V
V
V
V
V
V
V
V
V
R
V
with heatsink compound (0.42 K/m.K; 50 µm)
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
DS
GS
GS
GS
G
= 1
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 80°C
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= 10 V, I
= 0 V, V
= 10 V, V
= 10 V, V
= ±20 V, V
= 0 V, T
= 10 V, I
= V
I
150°C, R
DM
GS
, di/dt
DSS
, I
(External),
D
D
, T
DS
= 5 mA
= 8 mA
D
D
DS
DS
= I
J
J
= I
= 25 V, f = 1 MHz
G
DS
= 125°C
= 0.5 • V
= 0.5 • V
= 25°C
T
100 A/µs, V
= 2
T
,
= 0
,
1)
1)
GS
DSS
DSS
= 1 M
, I
, I
DD
D
D
(T
= I
= I
J
V
T
T
= 25°C, unless otherwise specified)
DSS
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSMG 100/05*
I K10
K13
min.
500
X18
45
Characteristic Values
2
A1
Maximum Ratings
9400
1280
0.15
typ.
460
120
155
330
45
60
45
55
*NTC optional
500
500
±20
±30
400
82
62
60
L N 9
3
5
max.
±100
K15
0.30 K/W
100
50
4
2
V/ns
K/W
m
mA
mJ
nC
nC
nC
nA
µA
pF
pF
pF
n s
n s
n s
n s
W
S
V
V
V
V
A
A
V
V
J
Caution: These Devices are
sensitive to electrostatic
discharge. Users should observe
proper ESD handling precautions.
Features
• Silicon chip on Direct-Copper-Bond
• Low drain to tab capacitance(< 25pF)
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Fast intrinsic Rectifier
• UL certified, E 148688
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
substrate
- High power dissipation
- Isolated mounting surface
- 3000V electrical isolation
rated
power supplies
I
V
R
D25
DSS
DSon
DS (on)
ECO-PAC
HDMOS
= 82 A
= 500 V
= 50 m
TM
process
TM
2
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psmg10005 Summary of contents
Page 1
Power MOSFET in ECO-PAC 2 Single MOSFET Die Preliminary Data Sheet MOSFET Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM I T ...
Page 2
Source-Drain Diode Symbol Test Conditions Repetitive; pulse width limited 50A,-di/dt = ...