fqb3n60c Fairchild Semiconductor, fqb3n60c Datasheet
fqb3n60c
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fqb3n60c Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB3N60C REV. A1 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... DD G ≤ 3A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FQB3N60C REV. A1 Package Reel Size D2-PAK 330mm T = 25°C unless otherwise noted C Conditions 250μ ...
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... C 600 oss 500 C iss 400 300 C 200 rss 100 Drain-Source Voltage [V] DS FQB3N60C REV. A1 Figure 2. Transfer Characteristics 1 10 ∝ Notes : 1. 250 レ s Pulse Test 25∩ Figure 4. Body Diode Forward Voltage 20V ...
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... 150 Single Pulse - Drain-Source Voltage [ FQB3N60C REV. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ♦ Notes : 250 μ A 0.5 D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FQB3N60C REV. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB3N60C REV www.fairchildsemi.com ...
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... Mechanical Dimensions FQB3N60C REV. A1 D2-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQB3N60C REV. A1 ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...