mtp33n10e ON Semiconductor, mtp33n10e Datasheet

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mtp33n10e

Manufacturer Part Number
mtp33n10e
Description
Power Mosfet 33 Amps, 100 Volts
Manufacturer
ON Semiconductor
Datasheet

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Part Number
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Part Number:
MTP33N10E
Manufacturer:
MOT/ON
Quantity:
12 500
MTP33N10E
Power MOSFET
33 Amps, 100 Volts
N−Channel TO−220
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Discrete Fast Recovery Diode
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Diode is Characterized for Use in Bridge Circuits
I
DSS
Derate above 25°C
Energy − Starting T
(V
I
Purposes, 1/8″ from case for 10 sec.
L
− Continuous
− Non−Repetitive (t
− Junction to Case
− Junction to Ambient
DD
= 33 Apk, L = 1.000 mH, R
and V
= 25 Vdc, V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
GS
Specified at Elevated Temperature
J
GS
p
= 10 Vdc,
= 25°C
(T
≤ 10 ms)
= 1.0 MΩ)
C
= 25°C unless otherwise noted)
Preferred Device
p
G
≤ 10 μs)
= 25 Ω)
Symbol
T
V
V
V
R
J
R
V
E
I
P
DGR
GSM
, T
T
DSS
DM
I
I
θJC
θJA
GS
D
D
AS
D
L
stg
− 55 to
Value
± 20
± 40
62.5
100
100
125
150
545
260
1.0
1.0
33
20
99
1
Watts
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
MTP33N10E
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
MTP33N10E
LL
Y
WW
ORDERING INFORMATION
4
G
R
http://onsemi.com
33 AMPERES
DS(on)
CASE 221A
TO−220AB
100 VOLTS
STYLE 5
TO−220AB
Package
N−Channel
D
= 60 mΩ
Publication Order Number:
MARKING DIAGRAM
= Device Code
= Location Code
= Year
= Work Week
& PIN ASSIGNMENT
S
Gate
1
MTP33N10E
LLYWW
Drain
Drain
50 Units/Rail
MTP33N10E/D
2
4
Shipping
3
Source

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mtp33n10e Summary of contents

Page 1

... VOLTS mΩ DS(on) N−Channel MARKING DIAGRAM & PIN ASSIGNMENT 4 4 Drain TO−220AB CASE 221A STYLE 5 MTP33N10E LLYWW 1 3 Gate Source 2 Drain MTP33N10E = Device Code LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Package Shipping TO−220AB 50 Units/Rail Publication Order Number: MTP33N10E/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 μAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 100 Vdc Vdc 100 Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.09 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE T = 25°C 100 C 10 100 μ 1.0 R LIMIT DS(on) 0.1 THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated ...

Page 7

... U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MTP33N10E/D ...

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